Inventor
SUMIYA SHIGEAKI
JP27 patents
⚠️ This page may combine multiple inventors who share the name “SUMIYA SHIGEAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NGK INSULATORS LTD
18 patentsUS7687824B2Mar 30, 2010
Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device
NGK INSULATORS LTD8 citations84
US6869702B2Mar 22, 2005
Substrate for epitaxial growth
NGK INSULATORS LTD17 citations84
US6770914B2Aug 3, 2004
III nitride semiconductor substrate for ELO
NGK INSULATORS LTD11 citations74
US6765244B2Jul 20, 2004
III nitride film and a III nitride multilayer
NGK INSULATORS LTD7 citations74
US6597023B2Jul 22, 2003
Semiconductor light-detecting element
NGK INSULATORS LTD8 citations74
US8378386B2Feb 19, 2013
Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
NGK INSULATORS LTD6 citations73
US8946723B2Feb 3, 2015
Epitaxial substrate and method for manufacturing epitaxial substrate
NGK INSULATORS LTD4 citations72
US8648351B2Feb 11, 2014
Epitaxial substrate and method for manufacturing epitaxial substrate
NGK INSULATORS LTD6 citations72
US7632741B2Dec 15, 2009
Method for forming AlGaN crystal layer
NGK INSULATORS LTD4 citations63
US6749957B2Jun 15, 2004
Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element
NGK INSULATORS LTD4 citations63
US6703255B2Mar 9, 2004
Method for fabricating a III nitride film
NGK INSULATORS LTD3 citations63
US9478650B2Oct 25, 2016
Semiconductor device, HEMT device, and method of manufacturing semiconductor device
NGK INSULATORS LTD2 citations62
US7982241B2Jul 19, 2011
Epitaxial substrate, semiconductor device substrate, and HEMT device
NGK INSULATORS LTD1 citations52
US7771849B2Aug 10, 2010
Method of reducing dislocations in group III nitride crystal, and substrate for epitaxial growth
NGK INSULATORS LTD1 citations52
US7713847B2May 11, 2010
Method for forming AlGaN crystal layer
NGK INSULATORS LTD1 citations52
US6844611B2Jan 18, 2005
III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystal
NGK INSULATORS LTD1 citations52
US6805982B2Oct 19, 2004
Epitaxial substrates and semiconductor devices
NGK INSULATORS LTD0 citations52
US8969880B2Mar 3, 2015
Epitaxial substrate and method for manufacturing epitaxial substrate
NGK INSULATORS LTD0 citations41
MIYOSHI MAKOTO
7 patentsUS9090993B2Jul 28, 2015
Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrate
MIYOSHI MAKOTO6 citations72
US8410552B2Apr 2, 2013
Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
MIYOSHI MAKOTO5 citations72
US8415690B2Apr 9, 2013
Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
MIYOSHI MAKOTO4 citations62
US8471265B2Jun 25, 2013
Epitaxial substrate with intermediate layers for reinforcing compressive strain in laminated composition layers and manufacturing method thereof
MIYOSHI MAKOTO4 citations61
US8890208B2Nov 18, 2014
Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device
MIYOSHI MAKOTO1 citations51
US8598626B2Dec 3, 2013
Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure
MIYOSHI MAKOTO0 citations51
US8872226B2Oct 28, 2014
Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device
MIYOSHI MAKOTO0 citations41