Inventor
TANOUE TOMONORI
JP48 patents
⚠️ This page may combine multiple inventors who share the name “TANOUE TOMONORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
25 patentsUS6943624B2Sep 13, 2005
Radio frequency power amplifier
RENESAS TECH CORP61 citations96
US6775525B1Aug 10, 2004
Radio communication apparatus and semiconductor device
RENESAS TECH CORP28 citations93
US6710649B2Mar 23, 2004
Power amplifier module
RENESAS TECH CORP17 citations93
US6674323B2Jan 6, 2004
High frequency power amplifier, high frequency power amplifier module, and portable telephone
RENESAS TECH CORP40 citations93
US6958656B2Oct 25, 2005
Power amplifier module
RENESAS TECH CORP22 citations92
US6816017B2Nov 9, 2004
Power amplifier module
RENESAS TECH CORP29 citations92
US6771128B1Aug 3, 2004
Power amplifier module
RENESAS TECH CORP31 citations92
US7589588B2Sep 15, 2009
High-frequency power amplifier and radio communication equipment using the same
RENESAS TECH CORP15 citations84
US7482875B2Jan 27, 2009
High frequency power amplifier
RENESAS TECH CORP11 citations84
US7102427B2Sep 5, 2006
Amplifier and radio frequency power amplifier using the same
RENESAS TECH CORP17 citations84
US6949974B2Sep 27, 2005
Radio frequency power amplifier
RENESAS TECH CORP12 citations84
US6853243B2Feb 8, 2005
Wireless communication frequency signal amplification apparatus and transmitting and receiving apparatus
RENESAS TECH CORP13 citations84
US7408405B2Aug 5, 2008
High-frequency power amplifier module
RENESAS TECH CORP8 citations74
US7368988B2May 6, 2008
High-frequency power amplifier
RENESAS TECH CORP7 citations74
US7248118B2Jul 24, 2007
Radio frequency power amplifier module
RENESAS TECH CORP9 citations74
US6943387B2Sep 13, 2005
Semiconductor device, manufacturing thereof and power amplifier module
RENESAS TECH CORP7 citations74
US6822517B2Nov 23, 2004
Power amplifier module
RENESAS TECH CORP10 citations74
US7045877B2May 16, 2006
Semiconductor protection device
RENESAS TECH CORP7 citations73
US7368996B2May 6, 2008
High frequency power amplifier
RENESAS TECH CORP6 citations63
US7123087B2Oct 17, 2006
Radio frequency power amplifier
RENESAS TECH CORP4 citations63
US7547929B2Jun 16, 2009
Semiconductor HBT MMIC device and semiconductor module
RENESAS TECH CORP3 citations62
US6984871B2Jan 10, 2006
Semiconductor device with high structural reliability and low parasitic capacitance
RENESAS TECH CORP6 citations62
US7078975B2Jul 18, 2006
Power amplifier module
RENESAS TECH CORP0 citations52
US7015761B2Mar 21, 2006
Power amplifier module
RENESAS TECH CORP0 citations52
US7276744B2Oct 2, 2007
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP0 citations42
HITACHI LTD
15 patentsUS5604835AFeb 18, 1997
Integrated optical waveguide device
HITACHI LTD62 citations96
US5598015AJan 28, 1997
Hetero-junction bipolar transistor and semiconductor devices using the same
HITACHI LTD20 citations93
US5481120AJan 2, 1996
Semiconductor device and its fabrication method
HITACHI LTD36 citations91
US5949097ASep 7, 1999
Semiconductor device, method for manufacturing same, communication system and electric circuit system
HITACHI LTD17 citations84
US4979009ADec 18, 1990
Heterojunction bipolar transistor
HITACHI LTD18 citations82
US5229623AJul 20, 1993
Electric circuit using multiple differential negative resistance elements, semiconductor device and neuro chip using the same
HITACHI LTD16 citations74
US5023687AJun 11, 1991
Semiconductor device
HITACHI LTD7 citations74
US4983532AJan 8, 1991
Process for fabricating heterojunction bipolar transistors
HITACHI LTD11 citations74
US7067857B2Jun 27, 2006
Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module
HITACHI LTD9 citations73
US6881639B2Apr 19, 2005
Method of manufacturing semiconductor device
HITACHI LTD7 citations73
US5381027AJan 10, 1995
Semiconductor device having a heterojunction and a two dimensional gas as an active layer
HITACHI LTD18 citations73
US5258631ANov 2, 1993
Semiconductor device having a two-dimensional electron gas as an active layer
HITACHI LTD13 citations73
US5017973AMay 21, 1991
Resonant tunneling device
HITACHI LTD13 citations73
US5019524AMay 28, 1991
Method of manufacturing a heterojunction bipolar transistor
HITACHI LTD6 citations63
US5017517AMay 21, 1991
Method of fabricating semiconductor device using an Sb protection layer
HITACHI LTD6 citations62
TANOUE TOMONORI
2 patentsUS8306490B2Nov 6, 2012
High frequency power amplifier, transmitter and mobile communication terminal using the power amplifier
TANOUE TOMONORI15 citations82
US8229373B2Jul 24, 2012
High frequency power amplifier, transmitter and mobile communication terminal using the power amplifier
TANOUE TOMONORI10 citations82