Inventor
PARK HYUNG-MOO
KR21 patents
⚠️ This page may combine multiple inventors who share the name “PARK HYUNG-MOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
11 patentsUS5760418AJun 2, 1998
GaAs power semiconductor device operating at a low voltage and method for fabricating the same
KOREA ELECTRONICS TELECOMM20 citations92
US5745857AApr 28, 1998
Gaas power amplifier for analog/digital dual-mode cellular phones
KOREA ELECTRONICS TELECOMM36 citations90
US5554434ASep 10, 1996
Micro light valve and method for manufacturing the same
KOREA ELECTRONICS TELECOMM30 citations90
US5393710AFeb 28, 1995
Method for manufacturing a micro light valve
KOREA ELECTRONICS TELECOMM33 citations90
US5446959ASep 5, 1995
Method of packaging a power semiconductor device
KOREA ELECTRONICS TELECOMM17 citations81
US5639677AJun 17, 1997
Method of making a gaAs power semiconductor device operating at a low voltage
KOREA ELECTRONICS TELECOMM7 citations74
US5612853AMar 18, 1997
Package for a power semiconductor device
KOREA ELECTRONICS TELECOMM14 citations73
US5338981AAug 16, 1994
Semiconductor device having a decoding circuit for selection chips
KOREA ELECTRONICS TELECOMM8 citations73
US5693548ADec 2, 1997
Method for making T-gate of field effect transistor
KOREA ELECTRONICS TELECOMM13 citations70
US5642080AJun 24, 1997
Low noise amplifier in monolithic integrated circuit
KOREA ELECTRONICS TELECOMM9 citations69
US5459428AOct 17, 1995
Switch circuit for monolithic microwave integrated circuit device
KOREA ELECTRONICS TELECOMM10 citations69
SAMSUNG ELECTRONICS CO LTD
10 patentsUS6541328B2Apr 1, 2003
Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regions
SAMSUNG ELECTRONICS CO LTD125 citations95
US6043537AMar 28, 2000
Embedded memory logic device using self-aligned silicide and manufacturing method therefor
SAMSUNG ELECTRONICS CO LTD23 citations90
US7091567B2Aug 15, 2006
Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations81
US6391704B1May 21, 2002
Method for manufacturing an MDL semiconductor device including a DRAM device having self-aligned contact hole and a logic device having dual gate structure
SAMSUNG ELECTRONICS CO LTD19 citations77
US7629222B2Dec 8, 2009
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations72
US6333242B1Dec 25, 2001
Method of fabricating semiconductor device without having grooves at edge portions of STI
SAMSUNG ELECTRONICS CO LTD9 citations71
US6214676B1Apr 10, 2001
Embedded memory logic device using self-aligned silicide and manufacturing method therefor
SAMSUNG ELECTRONICS CO LTD13 citations71
US7491619B2Feb 17, 2009
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations61
US6677634B2Jan 13, 2004
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations60
US7745255B2Jun 29, 2010
Bonding pad structure, electronic device having a bonding pad structure and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52