P

Inventor

PARK HYUNG-MOO

KR21 patents
⚠️ This page may combine multiple inventors who share the name “PARK HYUNG-MOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOREA ELECTRONICS TELECOMM

11 patents

SAMSUNG ELECTRONICS CO LTD

10 patents
US6541328B2Apr 1, 2003

Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regions

SAMSUNG ELECTRONICS CO LTD125 citations95
US6043537AMar 28, 2000

Embedded memory logic device using self-aligned silicide and manufacturing method therefor

SAMSUNG ELECTRONICS CO LTD23 citations90
US7091567B2Aug 15, 2006

Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations81
US6391704B1May 21, 2002

Method for manufacturing an MDL semiconductor device including a DRAM device having self-aligned contact hole and a logic device having dual gate structure

SAMSUNG ELECTRONICS CO LTD19 citations77
US7629222B2Dec 8, 2009

Method of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations72
US6333242B1Dec 25, 2001

Method of fabricating semiconductor device without having grooves at edge portions of STI

SAMSUNG ELECTRONICS CO LTD9 citations71
US6214676B1Apr 10, 2001

Embedded memory logic device using self-aligned silicide and manufacturing method therefor

SAMSUNG ELECTRONICS CO LTD13 citations71
US7491619B2Feb 17, 2009

Methods of fabricating semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations61
US6677634B2Jan 13, 2004

Method for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations60
US7745255B2Jun 29, 2010

Bonding pad structure, electronic device having a bonding pad structure and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52