Inventor

LEE JOONMYOUNG

KR27 patents

⚠️ This page may combine multiple inventors who share the name “LEE JOONMYOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE JOONMYOUNG

SAMSUNG ELECTRONICS CO LTD

Memory devices and methods of manufacturing the same

Magnetic memory device and method of manufacturing the same

Magnetic memory device, method for manufacturing the same, and substrate treating apparatus

Magnetic memory device including capping pattern on non-magnetic pattern

Sputtering apparatus and method of fabricating magnetic memory device using the same

Sputtering apparatus and method of fabricating magnetic memory device using the same

Method of manufacuring a magnetic memory device

Magnetic tunnel junction and magnetic memory device with amorphous metal boride and diffusion barrier

Magnetic memory device

Magnetic memory devices

Process control method and process control system for manufacturing semiconductor device

Magnetic memory devices having perpendicular magnetic tunnel junction

Magnetic memory devices

Magnetic memory device

Magnetic memory device

Magnetic memory device and method for manufacturing the same

Apparatus for manufacturing semiconductor device

LEE JOONMYOUNG

Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same

Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same

Magnetic memory device and method of manufacturing the same

Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same

Magnetic memory devices having junction magnetic layers and buffer layers and related methods

Sputtering apparatuses and methods of manufacturing a magnetic memory device using the same

PARK SANG HWAN

Magnetic memory device and method for manufacturing the same

KIM KI WOONG

Magnetic memory device and method of fabricating the same

PARK YONG SUNG

Methods of forming a layer and methods of manufacturing magnetic memory devices using the same

OH SECHUNG

Magnetic tunnel junction memory devices including crystallized boron-including first magnetic layer on a tunnel barrier layer and lower boron-content second magnetic layer on the first magnetic layer