Inventor
MARCHACK NATHAN P
US64 patents
⚠️ This page may combine multiple inventors who share the name “MARCHACK NATHAN P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
49 patentsUS9450180B1Sep 20, 2016
Structure and method to reduce shorting in STT-MRAM device
IBM65 citations98
US9502640B1Nov 22, 2016
Structure and method to reduce shorting in STT-MRAM device
IBM25 citations94
US9660179B1May 23, 2017
Enhanced coercivity in MTJ devices by contact depth control
IBM13 citations92
US11980039B2May 7, 2024
Wide-base magnetic tunnel junction device with sidewall polymer spacer
IBM7 citations86
US10770652B2Sep 8, 2020
Magnetic tunnel junction (MTJ) bilayer hard mask to prevent redeposition
IBM7 citations84
US10583282B2Mar 10, 2020
Neuro-stem cell stimulation and growth enhancement with implantable nanodevice
IBM7 citations84
US9705077B2Jul 11, 2017
Spin torque MRAM fabrication using negative tone lithography and ion beam etching
IBM7 citations83
US9515252B1Dec 6, 2016
Low degradation MRAM encapsulation process using silicon-rich silicon nitride film
IBM13 citations83
US9490164B1Nov 8, 2016
Techniques for forming contacts for active BEOL
IBM10 citations82
US11056643B2Jul 6, 2021
Magnetic tunnel junction (MTJ) hard mask encapsulation to prevent redeposition
IBM2 citations73
US10957738B2Mar 23, 2021
Magnetic random access memory (MRAM) structure with small bottom electrode
IBM4 citations73
US10937945B2Mar 2, 2021
Structured pedestal for MTJ containing devices
IBM2 citations73
US10892403B2Jan 12, 2021
Structured bottom electrode for MTJ containing devices
IBM2 citations73
US10777735B2Sep 15, 2020
Contact via structures
IBM2 citations73
US10644233B2May 5, 2020
Combined CMP and RIE contact scheme for MRAM applications
IBM1 citations73
US10014464B1Jul 3, 2018
Combined CMP and RIE contact scheme for MRAM applications
IBM2 citations73
US9853210B2Dec 26, 2017
Reduced process degradation of spin torque magnetoresistive random access memory
IBM2 citations73
US9673386B2Jun 6, 2017
Structure and method to reduce shorting in STT-MRAM device
IBM2 citations73
US10388857B2Aug 20, 2019
Spin torque MRAM fabrication using negative tone lithography and ion beam etching
IBM1 citations72
US9728717B2Aug 8, 2017
Magnetic tunnel junction patterning using low atomic weight ion sputtering
IBM3 citations72
US10840441B2Nov 17, 2020
Diamond-like carbon hardmask for MRAM
IBM2 citations71
US11189782B2Nov 30, 2021
Multilayered bottom electrode for MTJ-containing devices
IBM4 citations70
US12063867B2Aug 13, 2024
Dual spacer for double magnetic tunnel junction devices
IBM0 citations63
US11937512B2Mar 19, 2024
Magnetic tunnel junction device with air gap
IBM0 citations63
US11502243B2Nov 15, 2022
Structured pedestal for MTJ containing devices
IBM0 citations63
US11404634B2Aug 2, 2022
Structured bottom electrode for MTJ containing devices
IBM0 citations63
US11370004B2Jun 28, 2022
Neuro-chemical sensor with inhibition of fouling on nano-electrode
IBM0 citations63
US11077475B2Aug 3, 2021
Neuro-chemical sensor with inhibition of fouling on nano-electrode
IBM0 citations63
US11013908B2May 25, 2021
Neuro-stem cell stimulation and growth enhancement with implantable nanodevice
IBM0 citations63
US10926079B2Feb 23, 2021
Neuro-stem cell stimulation and growth enhancement with implantable nanodevice
IBM0 citations63
US10918852B2Feb 16, 2021
Neuro-stem cell stimulation and growth enhancement with implantable nanodevice
IBM0 citations63
US10903417B2Jan 26, 2021
MTJ containing device with replacement top electrode
IBM0 citations63
US10727398B1Jul 28, 2020
MTJ containing device containing a bottom electrode embedded in diamond-like carbon
IBM1 citations63
US10686124B2Jun 16, 2020
Contact via structures
IBM1 citations63
US10084127B2Sep 25, 2018
Enhanced coercivity in MTJ devices by contact depth control
IBM1 citations63
US9947863B2Apr 17, 2018
Structure and method to reduce shorting in STT-MRAM device
IBM1 citations63
US9214355B2Dec 15, 2015
Molecular radical etch chemistry for increased throughput in pulsed plasma applications
IBM3 citations63
US11411175B2Aug 9, 2022
Self-aligned and misalignment-tolerant landing pad for magnetoresistive random access memory
IBM0 citations62
US11152563B2Oct 19, 2021
Reinforced single element bottom electrode for MTJ-containing devices
IBM0 citations62
US11011698B2May 18, 2021
Enhanced coercivity in MTJ devices by contact depth control
IBM0 citations62
US12451432B2Oct 21, 2025
Multi-layer topological interconnect with proximal doping layer
IBM0 citations58
US11121311B2Sep 14, 2021
MTJ containing device encapsulation to prevent shorting
IBM0 citations52
US10840433B2Nov 17, 2020
MRAM with high-aspect ratio bottom electrode
IBM0 citations52
US10784268B1Sep 22, 2020
OTP elements with high aspect ratio MTJ
IBM0 citations52
US10684246B2Jun 16, 2020
On-chip biosensors with nanometer scale glass-like carbon electrodes and improved adhesive coupling
IBM0 citations52
US10669153B2Jun 2, 2020
Neuro-chemical sensor with selectively permeable membrane on nano-electrode
IBM0 citations52
US10644232B2May 5, 2020
Self-aligned and misalignment-tolerant landing pad for magnetoresistive random access memory
IBM0 citations52
US10618806B2Apr 14, 2020
Neuro-chemical sensor with selectively permeable membrane on nano-electrode
IBM0 citations52
US10622553B2Apr 14, 2020
Cryogenic patterning of magnetic tunnel junctions
IBM0 citations52
TOKYO ELECTRON LTD
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