P

Inventor

MARCHACK NATHAN P

US64 patents
⚠️ This page may combine multiple inventors who share the name “MARCHACK NATHAN P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

49 patents
US9450180B1Sep 20, 2016

Structure and method to reduce shorting in STT-MRAM device

IBM65 citations98
US9502640B1Nov 22, 2016

Structure and method to reduce shorting in STT-MRAM device

IBM25 citations94
US9660179B1May 23, 2017

Enhanced coercivity in MTJ devices by contact depth control

IBM13 citations92
US11980039B2May 7, 2024

Wide-base magnetic tunnel junction device with sidewall polymer spacer

IBM7 citations86
US10770652B2Sep 8, 2020

Magnetic tunnel junction (MTJ) bilayer hard mask to prevent redeposition

IBM7 citations84
US10583282B2Mar 10, 2020

Neuro-stem cell stimulation and growth enhancement with implantable nanodevice

IBM7 citations84
US9705077B2Jul 11, 2017

Spin torque MRAM fabrication using negative tone lithography and ion beam etching

IBM7 citations83
US9515252B1Dec 6, 2016

Low degradation MRAM encapsulation process using silicon-rich silicon nitride film

IBM13 citations83
US9490164B1Nov 8, 2016

Techniques for forming contacts for active BEOL

IBM10 citations82
US11056643B2Jul 6, 2021

Magnetic tunnel junction (MTJ) hard mask encapsulation to prevent redeposition

IBM2 citations73
US10957738B2Mar 23, 2021

Magnetic random access memory (MRAM) structure with small bottom electrode

IBM4 citations73
US10937945B2Mar 2, 2021

Structured pedestal for MTJ containing devices

IBM2 citations73
US10892403B2Jan 12, 2021

Structured bottom electrode for MTJ containing devices

IBM2 citations73
US10777735B2Sep 15, 2020

Contact via structures

IBM2 citations73
US10644233B2May 5, 2020

Combined CMP and RIE contact scheme for MRAM applications

IBM1 citations73
US10014464B1Jul 3, 2018

Combined CMP and RIE contact scheme for MRAM applications

IBM2 citations73
US9853210B2Dec 26, 2017

Reduced process degradation of spin torque magnetoresistive random access memory

IBM2 citations73
US9673386B2Jun 6, 2017

Structure and method to reduce shorting in STT-MRAM device

IBM2 citations73
US10388857B2Aug 20, 2019

Spin torque MRAM fabrication using negative tone lithography and ion beam etching

IBM1 citations72
US9728717B2Aug 8, 2017

Magnetic tunnel junction patterning using low atomic weight ion sputtering

IBM3 citations72
US10840441B2Nov 17, 2020

Diamond-like carbon hardmask for MRAM

IBM2 citations71
US11189782B2Nov 30, 2021

Multilayered bottom electrode for MTJ-containing devices

IBM4 citations70
US12063867B2Aug 13, 2024

Dual spacer for double magnetic tunnel junction devices

IBM0 citations63
US11937512B2Mar 19, 2024

Magnetic tunnel junction device with air gap

IBM0 citations63
US11502243B2Nov 15, 2022

Structured pedestal for MTJ containing devices

IBM0 citations63
US11404634B2Aug 2, 2022

Structured bottom electrode for MTJ containing devices

IBM0 citations63
US11370004B2Jun 28, 2022

Neuro-chemical sensor with inhibition of fouling on nano-electrode

IBM0 citations63
US11077475B2Aug 3, 2021

Neuro-chemical sensor with inhibition of fouling on nano-electrode

IBM0 citations63
US11013908B2May 25, 2021

Neuro-stem cell stimulation and growth enhancement with implantable nanodevice

IBM0 citations63
US10926079B2Feb 23, 2021

Neuro-stem cell stimulation and growth enhancement with implantable nanodevice

IBM0 citations63
US10918852B2Feb 16, 2021

Neuro-stem cell stimulation and growth enhancement with implantable nanodevice

IBM0 citations63
US10903417B2Jan 26, 2021

MTJ containing device with replacement top electrode

IBM0 citations63
US10727398B1Jul 28, 2020

MTJ containing device containing a bottom electrode embedded in diamond-like carbon

IBM1 citations63
US10686124B2Jun 16, 2020

Contact via structures

IBM1 citations63
US10084127B2Sep 25, 2018

Enhanced coercivity in MTJ devices by contact depth control

IBM1 citations63
US9947863B2Apr 17, 2018

Structure and method to reduce shorting in STT-MRAM device

IBM1 citations63
US9214355B2Dec 15, 2015

Molecular radical etch chemistry for increased throughput in pulsed plasma applications

IBM3 citations63
US11411175B2Aug 9, 2022

Self-aligned and misalignment-tolerant landing pad for magnetoresistive random access memory

IBM0 citations62
US11152563B2Oct 19, 2021

Reinforced single element bottom electrode for MTJ-containing devices

IBM0 citations62
US11011698B2May 18, 2021

Enhanced coercivity in MTJ devices by contact depth control

IBM0 citations62
US12451432B2Oct 21, 2025

Multi-layer topological interconnect with proximal doping layer

IBM0 citations58
US11121311B2Sep 14, 2021

MTJ containing device encapsulation to prevent shorting

IBM0 citations52
US10840433B2Nov 17, 2020

MRAM with high-aspect ratio bottom electrode

IBM0 citations52
US10784268B1Sep 22, 2020

OTP elements with high aspect ratio MTJ

IBM0 citations52
US10684246B2Jun 16, 2020

On-chip biosensors with nanometer scale glass-like carbon electrodes and improved adhesive coupling

IBM0 citations52
US10669153B2Jun 2, 2020

Neuro-chemical sensor with selectively permeable membrane on nano-electrode

IBM0 citations52
US10644232B2May 5, 2020

Self-aligned and misalignment-tolerant landing pad for magnetoresistive random access memory

IBM0 citations52
US10618806B2Apr 14, 2020

Neuro-chemical sensor with selectively permeable membrane on nano-electrode

IBM0 citations52
US10622553B2Apr 14, 2020

Cryogenic patterning of magnetic tunnel junctions

IBM0 citations52

TOKYO ELECTRON LTD

1 patent

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