Inventor
ROBISON ROBERT R
US82 patents
⚠️ This page may combine multiple inventors who share the name “ROBISON ROBERT R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
32 patentsUS9859421B1Jan 2, 2018
Vertical field effect transistor with subway etch replacement metal gate
IBM25 citations94
US9728466B1Aug 8, 2017
Vertical field effect transistors with metallic source/drain regions
IBM24 citations94
US10249739B2Apr 2, 2019
Nanosheet MOSFET with partial release and source/drain epitaxy
IBM9 citations84
US10170584B2Jan 1, 2019
Nanosheet field effect transistors with partial inside spacers
IBM11 citations84
US10128347B2Nov 13, 2018
Gate-all-around field effect transistor having multiple threshold voltages
IBM6 citations84
US10096607B1Oct 9, 2018
Three-dimensional stacked junctionless channels for dense SRAM
IBM14 citations84
US9911804B1Mar 6, 2018
Vertical fin field effect transistor with air gap spacers
IBM8 citations84
US9466693B1Oct 11, 2016
Self aligned replacement metal source/drain finFET
IBM5 citations84
US9318622B1Apr 19, 2016
Fin-type PIN diode array
IBM15 citations84
US9059203B2Jun 16, 2015
Semiconductor-on-insulator (SOI) structure with selectivity placed sub-insulator layer void(s) and method of forming the SOI structure
IBM7 citations84
US8815669B2Aug 26, 2014
Metal gate structures for CMOS transistor devices having reduced parasitic capacitance
IBM8 citations84
US8685817B1Apr 1, 2014
Metal gate structures for CMOS transistor devices having reduced parasitic capacitance
IBM10 citations84
US8361872B2Jan 29, 2013
High performance low power bulk FET device and method of manufacture
IBM8 citations84
US10586854B2Mar 10, 2020
Gate-all-around field effect transistor having multiple threshold voltages
IBM2 citations73
US10559670B2Feb 11, 2020
Nanosheet field effect transistors with partial inside spacers
IBM2 citations73
US10418450B2Sep 17, 2019
Self aligned replacement metal source/drain finFET
IBM3 citations73
US10340340B2Jul 2, 2019
Multiple-threshold nanosheet transistors
IBM3 citations73
US10243041B2Mar 26, 2019
Vertical fin field effect transistor with air gap spacers
IBM1 citations73
US10170485B2Jan 1, 2019
Three-dimensional stacked junctionless channels for dense SRAM
IBM4 citations73
US10170543B2Jan 1, 2019
Vertical fin field effect transistor with air gap spacers
IBM1 citations73
US10056382B2Aug 21, 2018
Modulating transistor performance
IBM3 citations73
US9859384B2Jan 2, 2018
Vertical field effect transistors with metallic source/drain regions
IBM3 citations73
US9337088B2May 10, 2016
MOL resistor with metal grid heat shield
IBM2 citations63
US8053870B2Nov 8, 2011
Semiconductor structure incorporating multiple nitride layers to improve thermal dissipation away from a device and a method of forming the structure
IBM5 citations63
US8034692B2Oct 11, 2011
Structure and method for manufacturing asymmetric devices
IBM2 citations63
US7986022B2Jul 26, 2011
Semispherical integrated circuit structures
IBM3 citations63
US7808039B2Oct 5, 2010
SOI transistor with merged lateral bipolar transistor
IBM2 citations63
US7737498B2Jun 15, 2010
Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices
IBM3 citations63
US7709926B2May 4, 2010
Device structures for active devices fabricated using a semiconductor-on-insulator substrate and design structures for a radiofrequency integrated circuit
IBM3 citations63
US12015069B2Jun 18, 2024
Gate-all-around field effect transistor having multiple threshold voltages
IBM0 citations62
US11024709B2Jun 1, 2021
Vertical fin field effect transistor with air gap spacers
IBM0 citations62
US10170477B2Jan 1, 2019
Forming MOSFET structures with work function modification
IBM1 citations62
GLOBALFOUNDRIES INC
6 patentsUS9530798B1Dec 27, 2016
High performance heat shields with reduced capacitance
GLOBALFOUNDRIES INC16 citations84
US9240406B2Jan 19, 2016
Precision trench capacitor
GLOBALFOUNDRIES INC9 citations84
US9972550B2May 15, 2018
Source/drain epitaxial electrical monitor
GLOBALFOUNDRIES INC2 citations73
US9935106B2Apr 3, 2018
Multi-finger devices in mutliple-gate-contacted-pitch, integrated structures
GLOBALFOUNDRIES INC3 citations73
US9847416B1Dec 19, 2017
Performance-enhanced vertical device and method of forming thereof
GLOBALFOUNDRIES INC5 citations73
US9536882B2Jan 3, 2017
Field-isolated bulk FinFET
GLOBALFOUNDRIES INC3 citations73
ANDERSON BRENT A
2 patentsLUKAITIS JOSEPH M
2 patentsUS8541864B2Sep 24, 2013
Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture
LUKAITIS JOSEPH M2 citations61
US8298904B2Oct 30, 2012
Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture
LUKAITIS JOSEPH M3 citations61
FURUKAWA TOSHIHARU
1 patentJOHNSON JEFFREY B
1 patentABADEER WAGDI W
1 patentTESSERA INC
1 patentGEBRESELASIE EPHREM G
1 patentTESSERA LLC
1 patentELLIS-MONAGHAN JOHN J
1 patentHARMON DAVID L
1 patentShowing the top 50 of 82 patents by PatentIndex Score.