Inventor

LIAO HUNG-CHE

TW20 patents

⚠️ This page may combine multiple inventors who share the name “LIAO HUNG-CHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIAO HUNG-CHE

TAIWAN SEMICONDUCTOR MFG CO LTD

Flash memory device having high coupling ratio

Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structure

Semiconductor device having a wall structure surrounding a stacked gate structure

Method of making a semiconductor structure

Semiconductor structure and method for forming the same

Semiconductor structure

Semiconductor structure and method for forming the same

Semiconductor structure and method for forming the same

Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the same

Method for fabricating semiconductor structure with passivation sidewall block

Damascene non-volatile memory cells and methods for forming the same

Integrated circuit and fabricating method thereof

Contact structure for high aspect ratio and method of fabricating the same

Semiconductor device structure and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG

Microelectronic device with a spacer redistribution layer via and method of making the same

Two step thermal treatment procedure applied to polycide structures deposited using dichlorosilane as a reactant

Butted contact resistance of an SRAM by double VCC implantation

Method for preventing backside polysilicon peeling in a 4T+2R SRAM process

Method for improving the butted contact resistance of an SRAM by double Vcc implantation

CHIU HUNG-YU

Damascene non-volatile memory cells and methods for forming the same