Inventor
NELHIEBEL MICHAEL
AT18 patents
⚠️ This page may combine multiple inventors who share the name “NELHIEBEL MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
10 patentsUS10304782B2May 28, 2019
Compressive interlayer having a defined crack-stop edge extension
INFINEON TECHNOLOGIES AG4 citations69
US12292469B2May 6, 2025
Current measuring circuit
INFINEON TECHNOLOGIES AG0 citations59
US11443990B2Sep 13, 2022
Prognostic health management for power devices
INFINEON TECHNOLOGIES AG0 citations58
US10396067B2Aug 27, 2019
Semiconductor device having a load current component and a sensor component
INFINEON TECHNOLOGIES AG0 citations50
US10249612B2Apr 2, 2019
Semiconductor device including self-protecting current sensor
INFINEON TECHNOLOGIES AG0 citations50
US9812376B2Nov 7, 2017
Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device
INFINEON TECHNOLOGIES AG0 citations49
US10700019B2Jun 30, 2020
Semiconductor device with compressive interlayer
INFINEON TECHNOLOGIES AG0 citations48
US10446469B2Oct 15, 2019
Semiconductor device having a copper element and method of forming a semiconductor device having a copper element
INFINEON TECHNOLOGIES AG0 citations48
US11127693B2Sep 21, 2021
Barrier for power metallization in semiconductor devices
INFINEON TECHNOLOGIES AG0 citations45
US9523729B2Dec 20, 2016
Apparatus and method for testing electric conductors
INFINEON TECHNOLOGIES AG0 citations42
INFINEON TECHNOLOGIES AUSTRIA AG
6 patentsUS11171049B2Nov 9, 2021
Semiconductor device and a method of forming the semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations60
US11276624B2Mar 15, 2022
Semiconductor device power metallization layer with stress-relieving heat sink structure
INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US10978395B2Apr 13, 2021
Method of manufacturing a semiconductor device having a power metallization structure
INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US10937720B2Mar 2, 2021
Semiconductor device with copper structure
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US10332793B2Jun 25, 2019
Self-organizing barrier layer disposed between a metallization layer and a semiconductor region
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US10734320B2Aug 4, 2020
Power metallization structure for semiconductor devices
INFINEON TECHNOLOGIES AUSTRIA AG0 citations49