Inventor

HEITZSCH OLAF

DE8 patents

⚠️ This page may combine multiple inventors who share the name “HEITZSCH OLAF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

5 patents

US6337255B1Jan 8, 2002

Method for forming a trench structure in a silicon substrate

INFINEON TECHNOLOGIES AG25 citations91

US6459296B2Oct 1, 2002

Method, system and method of using a component for setting the electrical characteristics of microelectronic circuit configurations

INFINEON TECHNOLOGIES AG8 citations71

US6447372B1Sep 10, 2002

Polishing agent for semiconductor substrates

INFINEON TECHNOLOGIES AG4 citations61

US7795105B2Sep 14, 2010

Method for producing an integrated circuit assembly with an auxiliary indentation, particularly with aligning marks, and an integrated circuit arrangement

INFINEON TECHNOLOGIES AG5 citations59

US6645812B2Nov 11, 2003

Method for fabricating a non-volatile semiconductor memory cell with a separate tunnel window

INFINEON TECHNOLOGIES AG0 citations48

SIEMENS AG

1 patent

US6014218AJan 11, 2000

Device and method for end-point monitoring used in the polishing of components, in particular semiconductor components

SIEMENS AG14 citations72

INFINEON TECHNOLOGIES AUSTRIA AG

1 patent

US11276624B2Mar 15, 2022

Semiconductor device power metallization layer with stress-relieving heat sink structure

INFINEON TECHNOLOGIES AUSTRIA AG0 citations57

GOLLER KLAUS

1 patent

US8901737B2Dec 2, 2014

Integrated circuit arrangement with an auxiliary indentation, particularly with aligning marks

GOLLER KLAUS0 citations43