Inventor
ROBL WERNER
DE25 patents
⚠️ This page may combine multiple inventors who share the name “ROBL WERNER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
13 patentsUS6720212B2Apr 13, 2004
Method of eliminating back-end rerouting in ball grid array packaging
INFINEON TECHNOLOGIES AG96 citations96
US6734097B2May 11, 2004
Liner with poor step coverage to improve contact resistance in W contacts
INFINEON TECHNOLOGIES AG27 citations90
US6794282B2Sep 21, 2004
Three layer aluminum deposition process for high aspect ratio CL contacts
INFINEON TECHNOLOGIES AG3 citations62
US11615963B2Mar 28, 2023
Electronic device, electronic module and methods for fabricating the same
INFINEON TECHNOLOGIES AG0 citations59
US10741402B2Aug 11, 2020
Electronic device, electronic module and methods for fabricating the same
INFINEON TECHNOLOGIES AG1 citations59
US12543509B2Feb 3, 2026
Fabrication of electroplated nickel-iron layers with titanium-copper seed layer
INFINEON TECHNOLOGIES AG0 citations55
US8786085B2Jul 22, 2014
Semiconductor structure and method for making same
INFINEON TECHNOLOGIES AG0 citations51
US7909978B2Mar 22, 2011
Method of making an integrated circuit including electrodeposition of metallic chromium
INFINEON TECHNOLOGIES AG0 citations51
US6943114B2Sep 13, 2005
Integration scheme for metal gap fill, with fixed abrasive CMP
INFINEON TECHNOLOGIES AG0 citations51
US10648096B2May 12, 2020
Electrolyte, method of forming a copper layer and method of forming a chip
INFINEON TECHNOLOGIES AG0 citations50
US8759207B2Jun 24, 2014
Semiconductor structure and method for making same
INFINEON TECHNOLOGIES AG0 citations49
US10446469B2Oct 15, 2019
Semiconductor device having a copper element and method of forming a semiconductor device having a copper element
INFINEON TECHNOLOGIES AG0 citations48
US7974120B2Jul 5, 2011
Spin device
INFINEON TECHNOLOGIES AG0 citations40
INFINEON TECHNOLOGIES AUSTRIA AG
3 patentsUS11171049B2Nov 9, 2021
Semiconductor device and a method of forming the semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations60
US11276624B2Mar 15, 2022
Semiconductor device power metallization layer with stress-relieving heat sink structure
INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US10332793B2Jun 25, 2019
Self-organizing barrier layer disposed between a metallization layer and a semiconductor region
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50