P

Inventor

ITOU TAKASHI

JP43 patents
⚠️ This page may combine multiple inventors who share the name “ITOU TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

22 patents
US6339357B1Jan 15, 2002

Semiconductor integrated circuit device capable of externally monitoring internal voltage

MITSUBISHI ELECTRIC CORP62 citations96
US6104641AAug 15, 2000

Switchable multi bit semiconductor memory device

MITSUBISHI ELECTRIC CORP44 citations92
US6097662AAug 1, 2000

Dynamic semiconductor memory device with low power consumption mode increasing electrostatic capacity of memory cell than in normal operation mode

MITSUBISHI ELECTRIC CORP23 citations92
US5999483ADec 7, 1999

Semiconductor circuit device operating in synchronization with clock signal

MITSUBISHI ELECTRIC CORP25 citations92
US5986959ANov 16, 1999

Semiconductor memory device having internal voltage down-converting circuit reducing current consumption upon power ON

MITSUBISHI ELECTRIC CORP51 citations92
US5956278ASep 21, 1999

Semiconductor circuit device with internal power supply circuit

MITSUBISHI ELECTRIC CORP28 citations92
US5903513AMay 11, 1999

Semiconductor integrated circuit device with clock frequency invariant voltage step-down circuit

MITSUBISHI ELECTRIC CORP31 citations92
US5894446AApr 13, 1999

Semiconductor memory device operable with reduced current consumption immediately after power-on

MITSUBISHI ELECTRIC CORP44 citations92
US5485533AJan 16, 1996

Method and apparatus for encoding video signals in 3-D blocks without detecting image motion

MITSUBISHI ELECTRIC CORP29 citations92
US5973988AOct 26, 1999

Semiconductor memory device having circuit for monitoring set value of mode register

MITSUBISHI ELECTRIC CORP46 citations89
US6535412B1Mar 18, 2003

Semiconductor memory device capable of switching output data width

MITSUBISHI ELECTRIC CORP14 citations84
US6486731B2Nov 26, 2002

Semiconductor integrated circuit device capable of externally monitoring internal voltage

MITSUBISHI ELECTRIC CORP11 citations74
US6480435B2Nov 12, 2002

Semiconductor memory device with controllable operation timing of sense amplifier

MITSUBISHI ELECTRIC CORP12 citations74
US6430097B1Aug 6, 2002

Semiconductor memory device enabling reduction of test time period

MITSUBISHI ELECTRIC CORP7 citations74
US5875146AFeb 23, 1999

Semiconductor integrated circuit device with burst length invariant internal circuit

MITSUBISHI ELECTRIC CORP10 citations74
US6269038B1Jul 31, 2001

Semiconductor memory device with test mode decision circuit

MITSUBISHI ELECTRIC CORP9 citations73
US6259640B1Jul 10, 2001

Semiconductor storage device having a delayed sense amplifier activating signal during a test mode

MITSUBISHI ELECTRIC CORP8 citations71
US6504787B2Jan 7, 2003

Semiconductor memory device with reduced power consumption during refresh operation

MITSUBISHI ELECTRIC CORP12 citations66
US6459632B1Oct 1, 2002

Semiconductor memory device having redundancy function

MITSUBISHI ELECTRIC CORP4 citations63
US6333530B1Dec 25, 2001

Semiconductor memory device having redundancy function

MITSUBISHI ELECTRIC CORP2 citations63
US6181119B1Jan 30, 2001

Circuit compensating for change in internal power supply voltage, and semiconductor integrated circuit device including such a circuit

MITSUBISHI ELECTRIC CORP6 citations63
US6285617B1Sep 4, 2001

Semiconductor memory device preventing malfunction during refresh operation even when noise is superimposed on control signal

MITSUBISHI ELECTRIC CORP0 citations40

RENESAS TECH CORP

5 patents

KAO CORP

5 patents

YUYAMA MFG CO LTD

3 patents

SONY CORP

3 patents

TAKIGEN MFG CO

1 patent

KATOU TOMOHIRO

1 patent

SHIMANO KK

1 patent

SONY GROUP CORP

1 patent

NOHMI BOSAI LTD

1 patent