P

Inventor

KLOSE HELMUT

DE32 patents
⚠️ This page may combine multiple inventors who share the name “KLOSE HELMUT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SIEMENS AG

27 patents
US5767001AJun 16, 1998

Process for producing semiconductor components between which contact is made vertically

SIEMENS AG508 citations99
US6172391B1Jan 9, 2001

DRAM cell arrangement and method for the manufacture thereof

SIEMENS AG122 citations98
US5930596AJul 27, 1999

Semiconductor component for vertical integration and manufacturing method

SIEMENS AG54 citations96
US5760455AJun 2, 1998

Micromechanical semiconductor component and manufacturing method therefor

SIEMENS AG90 citations96
US5741733AApr 21, 1998

Method for the production of a three-dimensional circuit arrangement

SIEMENS AG69 citations96
US5447067ASep 5, 1995

Acceleration sensor and method for manufacturing same

SIEMENS AG75 citations96
US5373181ADec 13, 1994

Sensor for sensing fingerpaints and method for producing the sensor

SIEMENS AG55 citations96
US5834332ANov 10, 1998

Micromechanical semiconductor components and manufacturing method therefor

SIEMENS AG31 citations92
US5450754ASep 19, 1995

Pressure sensor

SIEMENS AG20 citations92
US5431051AJul 11, 1995

Tunnel effect acceleration sensor

SIEMENS AG23 citations92
US5326718AJul 5, 1994

Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor

SIEMENS AG33 citations92
US5882963AMar 16, 1999

Method of manufacturing semiconductor components

SIEMENS AG30 citations90
US5498567AMar 12, 1996

Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor

SIEMENS AG16 citations82
US5422303AJun 6, 1995

Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor

SIEMENS AG17 citations82
US6043543AMar 28, 2000

Read-only memory cell configuration with trench MOS transistor and widened drain region

SIEMENS AG8 citations74
US6022786AFeb 8, 2000

Method for manufacturing a capacitor for a semiconductor arrangement

SIEMENS AG15 citations74
US5969534AOct 19, 1999

Semiconductor testing apparatus

SIEMENS AG13 citations74
US5700702ADec 23, 1997

Method for manufacturing an acceleration sensor

SIEMENS AG12 citations74
US5358882AOct 25, 1994

Method for manufacturing a bipolar transistor in a substrate

SIEMENS AG12 citations74
US5212104AMay 18, 1993

Method for manufacturing an mos transistor

SIEMENS AG9 citations74
US5177582AJan 5, 1993

CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same

SIEMENS AG17 citations73
US5273934ADec 28, 1993

Method for producing a doped region in a substrate

SIEMENS AG8 citations71
US5460982AOct 24, 1995

Method for manufacturing lateral bipolar transistors

SIEMENS AG3 citations63
US5455185AOct 3, 1995

Method for manufacturing a bipolar transistor having base and collector in a vertical sequence

SIEMENS AG4 citations63
US5714397AFeb 3, 1998

Process for producing lateral bipolar transistor

SIEMENS AG1 citations52
US5610531AMar 11, 1997

Testing method for semiconductor circuit levels

SIEMENS AG0 citations42
US5407843AApr 18, 1995

Method for manufacturing lateral bipolar transistors

SIEMENS AG0 citations42

INFINEON TECHNOLOGIES AG

4 patents

RAWIE A GMBH & CO

1 patent