Inventor
KLOSE HELMUT
DE32 patents
⚠️ This page may combine multiple inventors who share the name “KLOSE HELMUT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
27 patentsUS5767001AJun 16, 1998
Process for producing semiconductor components between which contact is made vertically
SIEMENS AG508 citations99
US6172391B1Jan 9, 2001
DRAM cell arrangement and method for the manufacture thereof
SIEMENS AG122 citations98
US5930596AJul 27, 1999
Semiconductor component for vertical integration and manufacturing method
SIEMENS AG54 citations96
US5760455AJun 2, 1998
Micromechanical semiconductor component and manufacturing method therefor
SIEMENS AG90 citations96
US5741733AApr 21, 1998
Method for the production of a three-dimensional circuit arrangement
SIEMENS AG69 citations96
US5447067ASep 5, 1995
Acceleration sensor and method for manufacturing same
SIEMENS AG75 citations96
US5373181ADec 13, 1994
Sensor for sensing fingerpaints and method for producing the sensor
SIEMENS AG55 citations96
US5834332ANov 10, 1998
Micromechanical semiconductor components and manufacturing method therefor
SIEMENS AG31 citations92
US5450754ASep 19, 1995
Pressure sensor
SIEMENS AG20 citations92
US5431051AJul 11, 1995
Tunnel effect acceleration sensor
SIEMENS AG23 citations92
US5326718AJul 5, 1994
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
SIEMENS AG33 citations92
US5882963AMar 16, 1999
Method of manufacturing semiconductor components
SIEMENS AG30 citations90
US5498567AMar 12, 1996
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
SIEMENS AG16 citations82
US5422303AJun 6, 1995
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
SIEMENS AG17 citations82
US6043543AMar 28, 2000
Read-only memory cell configuration with trench MOS transistor and widened drain region
SIEMENS AG8 citations74
US6022786AFeb 8, 2000
Method for manufacturing a capacitor for a semiconductor arrangement
SIEMENS AG15 citations74
US5969534AOct 19, 1999
Semiconductor testing apparatus
SIEMENS AG13 citations74
US5700702ADec 23, 1997
Method for manufacturing an acceleration sensor
SIEMENS AG12 citations74
US5358882AOct 25, 1994
Method for manufacturing a bipolar transistor in a substrate
SIEMENS AG12 citations74
US5212104AMay 18, 1993
Method for manufacturing an mos transistor
SIEMENS AG9 citations74
US5177582AJan 5, 1993
CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same
SIEMENS AG17 citations73
US5273934ADec 28, 1993
Method for producing a doped region in a substrate
SIEMENS AG8 citations71
US5460982AOct 24, 1995
Method for manufacturing lateral bipolar transistors
SIEMENS AG3 citations63
US5455185AOct 3, 1995
Method for manufacturing a bipolar transistor having base and collector in a vertical sequence
SIEMENS AG4 citations63
US5714397AFeb 3, 1998
Process for producing lateral bipolar transistor
SIEMENS AG1 citations52
US5610531AMar 11, 1997
Testing method for semiconductor circuit levels
SIEMENS AG0 citations42
US5407843AApr 18, 1995
Method for manufacturing lateral bipolar transistors
SIEMENS AG0 citations42
INFINEON TECHNOLOGIES AG
4 patentsUS6593612B2Jul 15, 2003
Structure and method for forming a body contact for vertical transistor cells
INFINEON TECHNOLOGIES AG37 citations92
US6441424B1Aug 27, 2002
Integrated circuit configuration having at least one capacitor and method for producing the same
INFINEON TECHNOLOGIES AG15 citations84
US6583464B1Jun 24, 2003
Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistor
INFINEON TECHNOLOGIES AG10 citations71
US6211019B1Apr 3, 2001
Read-only memory cell device and method for its production
INFINEON TECHNOLOGIES AG4 citations63