P

Inventor

WEBER WERNER

DE73 patents
⚠️ This page may combine multiple inventors who share the name “WEBER WERNER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

16 patents
US7775115B2Aug 17, 2010

Sensor component and method for producing a sensor component

INFINEON TECHNOLOGIES AG25 citations92
US7725629B2May 25, 2010

Processor array arrangement controlled by control computer

INFINEON TECHNOLOGIES AG21 citations90
US6717843B1Apr 6, 2004

Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type

INFINEON TECHNOLOGIES AG14 citations84
US6525978B2Feb 25, 2003

Circuit configuration for evaluating the information content of a memory cell

INFINEON TECHNOLOGIES AG13 citations84
US6490192B2Dec 3, 2002

Device for evaluating cell resistances in a magnetoresistive memory

INFINEON TECHNOLOGIES AG16 citations84
US6366494B2Apr 2, 2002

Magnetoresistive memory having elevated interference immunity

INFINEON TECHNOLOGIES AG14 citations82
US6822916B2Nov 23, 2004

Read/write amplifier having vertical transistors for a DRAM memory

INFINEON TECHNOLOGIES AG8 citations74
US6625076B2Sep 23, 2003

Circuit configuration fir evaluating the information content of a memory cell

INFINEON TECHNOLOGIES AG12 citations74
US6611614B1Aug 26, 2003

Image acquisition apparatus

INFINEON TECHNOLOGIES AG9 citations74
US6580636B2Jun 17, 2003

Magnetoresistive memory with a low current density

INFINEON TECHNOLOGIES AG11 citations74
US6512688B2Jan 28, 2003

Device for evaluating cell resistances in a magnetoresistive memory

INFINEON TECHNOLOGIES AG10 citations74
US6487109B2Nov 26, 2002

Magnetoresistive memory and method for reading a magnetoresistive memory

INFINEON TECHNOLOGIES AG9 citations71
US6998637B2Feb 14, 2006

Circuit element having a first layer composed of an electrically insulating substrate material, a method for producing a circuit element, bispyridinium compounds and their use in circuit elements

INFINEON TECHNOLOGIES AG10 citations69
US8004682B2Aug 23, 2011

Methods and systems for analyzing a volume of gas

INFINEON TECHNOLOGIES AG2 citations63
US7851875B2Dec 14, 2010

MEMS devices and methods of manufacture thereof

INFINEON TECHNOLOGIES AG2 citations63
US11081551B2Aug 3, 2021

Method for producing a graphene-based sensor

INFINEON TECHNOLOGIES AG0 citations62

SIEMENS AG

14 patents
US5701037ADec 23, 1997

Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit

SIEMENS AG158 citations97
US6146992ANov 14, 2000

Vertically integrated semiconductor component and method of producing the same

SIEMENS AG50 citations96
US5930596AJul 27, 1999

Semiconductor component for vertical integration and manufacturing method

SIEMENS AG54 citations96
US5939945AAug 17, 1999

Amplifier with neuron MOS transistors

SIEMENS AG88 citations95
US6539506B1Mar 25, 2003

Read/write memory with self-test device and associated test method

SIEMENS AG33 citations92
US6313517B1Nov 6, 2001

Vertically integrated semiconductor component

SIEMENS AG24 citations92
US5818112AOct 6, 1998

Arrangement for capacitive signal transmission between the chip layers of a vertically integrated circuit

SIEMENS AG50 citations91
US5990709ANov 23, 1999

Circuit for comparing two electrical quantities provided by a first neuron MOS field effect transistor and a reference source

SIEMENS AG18 citations83
US5969534AOct 19, 1999

Semiconductor testing apparatus

SIEMENS AG13 citations74
US5991789ANov 23, 1999

Circuit arrangement for realizing logic elements that can be represented by threshold value equations

SIEMENS AG13 citations73
US5942912AAug 24, 1999

Devices for the self-adjusting setting of the operating point in amplifier circuits with neuron MOS transistors

SIEMENS AG8 citations73
US6037885AMar 14, 2000

Digital/analog converter using a floating gate MOS neuron transistor with capacitive coupling

SIEMENS AG10 citations70
US6028803AFeb 22, 2000

Read amplifier for semiconductor memory cells with means to compensate threshold voltage differences in read amplifier transistors

SIEMENS AG9 citations69
US6037626AMar 14, 2000

Semiconductor neuron with variable input weights

SIEMENS AG2 citations63

HEIDELBERGER DRUCKMASCH AG

7 patents

BOSCH GMBH ROBERT

3 patents

HOECHST AG

2 patents

BASF AG

2 patents

TELDIX GMBH

1 patent

SCHRACK COMPONENTS AG

1 patent

TURCK WERNER KG

1 patent

KRACHT PUMPEN MOTOREN

1 patent

AVAGO TECHNOLOGIES WIRELESS IP

1 patent

SCHWEIZERISCHE VISCOSE

1 patent

Showing the top 50 of 73 patents by PatentIndex Score.