Inventor
CARTER JR CALVIN H
US26 patents
⚠️ This page may combine multiple inventors who share the name “CARTER JR CALVIN H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CREE INC
13 patentsUS6218680B1Apr 17, 2001
Semi-insulating silicon carbide without vanadium domination
CREE INC349 citations99
US6639247B2Oct 28, 2003
Semi-insulating silicon carbide without vanadium domination
CREE INC51 citations96
US6403982B2Jun 11, 2002
Semi-insulating silicon carbide without vanadium domination
CREE INC71 citations96
US6396080B2May 28, 2002
Semi-insulating silicon carbide without vanadium domination
CREE INC69 citations96
US7323051B2Jan 29, 2008
One hundred millimeter single crystal silicon carbide wafer
CREE INC30 citations95
US7316747B2Jan 8, 2008
Seeded single crystal silicon carbide growth and resulting crystals
CREE INC34 citations92
US6849874B2Feb 1, 2005
Minimizing degradation of SiC bipolar semiconductor devices
CREE INC30 citations92
US6974720B2Dec 13, 2005
Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
CREE INC25 citations90
US7220313B2May 22, 2007
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
CREE INC15 citations82
US7427326B2Sep 23, 2008
Minimizing degradation of SiC bipolar semiconductor devices
CREE INC7 citations73
US6964917B2Nov 15, 2005
Semi-insulating silicon carbide produced by Neutron transmutation doping
CREE INC9 citations73
US7880171B2Feb 1, 2011
Minimizing degradation of SiC bipolar semiconductor devices
CREE INC0 citations51
US7811943B2Oct 12, 2010
Process for producing silicon carbide crystals having increased minority carrier lifetimes
CREE INC0 citations51
CREE RESEARCH INC
6 patentsUS5210051AMay 11, 1993
High efficiency light emitting diodes from bipolar gallium nitride
CREE RESEARCH INC888 citations99
US5200022AApr 6, 1993
Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
CREE RESEARCH INC702 citations99
US5465249ANov 7, 1995
Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
CREE RESEARCH INC151 citations98
US5119540AJun 9, 1992
Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
CREE RESEARCH INC138 citations98
US5679153AOct 21, 1997
Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
CREE RESEARCH INC148 citations94
US5381103AJan 10, 1995
System and method for accelerated degradation testing of semiconductor devices
CREE RESEARCH INC57 citations92
UNIV NORTH CAROLINA STATE
3 patentsUSRE34861EFeb 14, 1995
Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
UNIV NORTH CAROLINA STATE745 citations98
US4912063AMar 27, 1990
Growth of beta-sic thin films and semiconductor devices fabricated thereon
UNIV NORTH CAROLINA STATE133 citations98
US4866005ASep 12, 1989
Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
UNIV NORTH CAROLINA STATE207 citations98