Inventor
PARK HEE-CHOUL
KR21 patents
⚠️ This page may combine multiple inventors who share the name “PARK HEE-CHOUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS5973972AOct 26, 1999
Precharge system for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD166 citations98
US6134180AOct 17, 2000
Synchronous burst semiconductor memory device
SAMSUNG ELECTRONICS CO LTD95 citations97
US6160746ADec 12, 2000
Semiconductor memory with auto-tracking bit line precharge scheme
SAMSUNG ELECTRONICS CO LTD25 citations92
US6031785AFeb 29, 2000
Random access memory having burst mode capability and method for operating the same
SAMSUNG ELECTRONICS CO LTD35 citations92
US5760446AJun 2, 1998
Electrostatic discharge structure of semiconductor device
SAMSUNG ELECTRONICS CO LTD24 citations92
US5592121AJan 7, 1997
Internal power-supply voltage supplier of semiconductor integrated circuit
SAMSUNG ELECTRONICS CO LTD31 citations92
US5477497ADec 19, 1995
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD26 citations92
US5311076AMay 10, 1994
Tristate data output buffer having reduced switching noise and intermediate-level setting
SAMSUNG ELECTRONICS CO LTD36 citations92
US5991229ANov 23, 1999
Internal clock generation circuit for synchronous semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations73
US5949721ASep 7, 1999
Data output related circuit which is suitable for semiconductor memory device for high -speed operation
SAMSUNG ELECTRONICS CO LTD15 citations73
US5825698AOct 20, 1998
Redundancy decoding circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD13 citations73
US5815459ASep 29, 1998
Address decoding . . . semiconductor memory
SAMSUNG ELECTRONICS CO LTD10 citations73
US5793226AAug 11, 1998
Data output buffer for multiple power supplies
SAMSUNG ELECTRONICS CO LTD16 citations73
US5732032AMar 24, 1998
Semiconductor memory device having a burn-in control circuit and burn-in test method thereof
SAMSUNG ELECTRONICS CO LTD13 citations73
US6393575B1May 21, 2002
Semiconductor device having input buffers
SAMSUNG ELECTRONICS CO LTD7 citations72
US5487050AJan 23, 1996
Decoding circuit and method for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD10 citations72
US5659510AAug 19, 1997
Integrated circuit devices with reliable fuse-based mode selection capability and methods of operating same
SAMSUNG ELECTRONICS CO LTD6 citations62
US5305279AApr 19, 1994
Semiconductor memory device having word line selection logic circuits
SAMSUNG ELECTRONICS CO LTD5 citations56
US12283338B2Apr 22, 2025
Global data line of multi-array synchronous random access memory (SRAM)
SAMSUNG ELECTRONICS CO LTD0 citations52