P

Inventor

PARK HEE-CHOUL

KR21 patents
⚠️ This page may combine multiple inventors who share the name “PARK HEE-CHOUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

19 patents
US5973972AOct 26, 1999

Precharge system for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD166 citations98
US6134180AOct 17, 2000

Synchronous burst semiconductor memory device

SAMSUNG ELECTRONICS CO LTD95 citations97
US6160746ADec 12, 2000

Semiconductor memory with auto-tracking bit line precharge scheme

SAMSUNG ELECTRONICS CO LTD25 citations92
US6031785AFeb 29, 2000

Random access memory having burst mode capability and method for operating the same

SAMSUNG ELECTRONICS CO LTD35 citations92
US5760446AJun 2, 1998

Electrostatic discharge structure of semiconductor device

SAMSUNG ELECTRONICS CO LTD24 citations92
US5592121AJan 7, 1997

Internal power-supply voltage supplier of semiconductor integrated circuit

SAMSUNG ELECTRONICS CO LTD31 citations92
US5477497ADec 19, 1995

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD26 citations92
US5311076AMay 10, 1994

Tristate data output buffer having reduced switching noise and intermediate-level setting

SAMSUNG ELECTRONICS CO LTD36 citations92
US5991229ANov 23, 1999

Internal clock generation circuit for synchronous semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations73
US5949721ASep 7, 1999

Data output related circuit which is suitable for semiconductor memory device for high -speed operation

SAMSUNG ELECTRONICS CO LTD15 citations73
US5825698AOct 20, 1998

Redundancy decoding circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD13 citations73
US5815459ASep 29, 1998

Address decoding . . . semiconductor memory

SAMSUNG ELECTRONICS CO LTD10 citations73
US5793226AAug 11, 1998

Data output buffer for multiple power supplies

SAMSUNG ELECTRONICS CO LTD16 citations73
US5732032AMar 24, 1998

Semiconductor memory device having a burn-in control circuit and burn-in test method thereof

SAMSUNG ELECTRONICS CO LTD13 citations73
US6393575B1May 21, 2002

Semiconductor device having input buffers

SAMSUNG ELECTRONICS CO LTD7 citations72
US5487050AJan 23, 1996

Decoding circuit and method for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD10 citations72
US5659510AAug 19, 1997

Integrated circuit devices with reliable fuse-based mode selection capability and methods of operating same

SAMSUNG ELECTRONICS CO LTD6 citations62
US5305279AApr 19, 1994

Semiconductor memory device having word line selection logic circuits

SAMSUNG ELECTRONICS CO LTD5 citations56
US12283338B2Apr 22, 2025

Global data line of multi-array synchronous random access memory (SRAM)

SAMSUNG ELECTRONICS CO LTD0 citations52

SAMSUNG SEMICONDUCTORS & TELEC

1 patent

SAMSUNG ELECTRONIC

1 patent