P

Inventor

TANG YUAN

US42 patents
⚠️ This page may combine multiple inventors who share the name “TANG YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

16 patents
US5629892AMay 13, 1997

Flash EEPROM memory with separate reference array

ADVANCED MICRO DEVICES INC82 citations96
US5485423AJan 16, 1996

Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS

ADVANCED MICRO DEVICES INC77 citations96
US5642311AJun 24, 1997

Overerase correction for flash memory which limits overerase and prevents erase verify errors

ADVANCED MICRO DEVICES INC76 citations95
US5852582ADec 22, 1998

Non-volatile storage device refresh time detector

ADVANCED MICRO DEVICES INC32 citations92
US5652447AJul 29, 1997

Flash EEPROM memory with reduced column leakage current

ADVANCED MICRO DEVICES INC22 citations92
US5482881AJan 9, 1996

Method of making flash EEPROM memory with reduced column leakage current

ADVANCED MICRO DEVICES INC37 citations92
US5831901ANov 3, 1998

Method of programming a memory cell to contain multiple values

ADVANCED MICRO DEVICES INC21 citations91
US5650964AJul 22, 1997

Method of inhibiting degradation of ultra short channel charge-carrying devices during discharge

ADVANCED MICRO DEVICES INC41 citations90
US5869385AFeb 9, 1999

Selectively oxidized field oxide region

ADVANCED MICRO DEVICES INC17 citations84
US5854108ADec 29, 1998

Method and system for providing a double diffuse implant junction in a flash device

ADVANCED MICRO DEVICES INC12 citations74
US5608672AMar 4, 1997

Correction method leading to a uniform threshold voltage distribution for a flash eprom

ADVANCED MICRO DEVICES INC15 citations74
US5481494AJan 2, 1996

Method for tightening VT distribution of 5 volt-only flash EEPROMS

ADVANCED MICRO DEVICES INC15 citations74
US5805502ASep 8, 1998

System for constant field erasure in a FLASH EPROM

ADVANCED MICRO DEVICES INC11 citations73
US5629893AMay 13, 1997

System for constant field erasure in a flash EPROM

ADVANCED MICRO DEVICES INC13 citations73
US5882985AMar 16, 1999

Reduction of field oxide step height during semiconductor fabrication

ADVANCED MICRO DEVICES INC3 citations63
US5596531AJan 21, 1997

Method for decreasing the discharge time of a flash EPROM cell

ADVANCED MICRO DEVICES INC5 citations60

WUHAN XINXIN SEMICONDUCTOR MFG

14 patents

EON SILICON DEVICES INC

6 patents

HYUNDAI ELECTRONICS AMERICA

2 patents

UPTAKE TECH INC

1 patent

SHENZHEN QIANHAI PATUOXUN NETWORK AND TECH CO LTD

1 patent

Temple University—Of the Commonwealth System of Higher Education

1 patent

MITSUBISHI CHEM ENG CORP

1 patent