Inventor
TANG YUAN
US42 patents
⚠️ This page may combine multiple inventors who share the name “TANG YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
16 patentsUS5629892AMay 13, 1997
Flash EEPROM memory with separate reference array
ADVANCED MICRO DEVICES INC82 citations96
US5485423AJan 16, 1996
Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS
ADVANCED MICRO DEVICES INC77 citations96
US5642311AJun 24, 1997
Overerase correction for flash memory which limits overerase and prevents erase verify errors
ADVANCED MICRO DEVICES INC76 citations95
US5852582ADec 22, 1998
Non-volatile storage device refresh time detector
ADVANCED MICRO DEVICES INC32 citations92
US5652447AJul 29, 1997
Flash EEPROM memory with reduced column leakage current
ADVANCED MICRO DEVICES INC22 citations92
US5482881AJan 9, 1996
Method of making flash EEPROM memory with reduced column leakage current
ADVANCED MICRO DEVICES INC37 citations92
US5831901ANov 3, 1998
Method of programming a memory cell to contain multiple values
ADVANCED MICRO DEVICES INC21 citations91
US5650964AJul 22, 1997
Method of inhibiting degradation of ultra short channel charge-carrying devices during discharge
ADVANCED MICRO DEVICES INC41 citations90
US5869385AFeb 9, 1999
Selectively oxidized field oxide region
ADVANCED MICRO DEVICES INC17 citations84
US5854108ADec 29, 1998
Method and system for providing a double diffuse implant junction in a flash device
ADVANCED MICRO DEVICES INC12 citations74
US5608672AMar 4, 1997
Correction method leading to a uniform threshold voltage distribution for a flash eprom
ADVANCED MICRO DEVICES INC15 citations74
US5481494AJan 2, 1996
Method for tightening VT distribution of 5 volt-only flash EEPROMS
ADVANCED MICRO DEVICES INC15 citations74
US5805502ASep 8, 1998
System for constant field erasure in a FLASH EPROM
ADVANCED MICRO DEVICES INC11 citations73
US5629893AMay 13, 1997
System for constant field erasure in a flash EPROM
ADVANCED MICRO DEVICES INC13 citations73
US5882985AMar 16, 1999
Reduction of field oxide step height during semiconductor fabrication
ADVANCED MICRO DEVICES INC3 citations63
US5596531AJan 21, 1997
Method for decreasing the discharge time of a flash EPROM cell
ADVANCED MICRO DEVICES INC5 citations60
WUHAN XINXIN SEMICONDUCTOR MFG
14 patentsUS10739801B2Aug 11, 2020
Band-gap reference circuit
WUHAN XINXIN SEMICONDUCTOR MFG2 citations73
US10498215B1Dec 3, 2019
Voltage regulator with flexible output voltage
WUHAN XINXIN SEMICONDUCTOR MFG5 citations73
US10452087B2Oct 22, 2019
Low drop-out regulator
WUHAN XINXIN SEMICONDUCTOR MFG2 citations73
US10606299B2Mar 31, 2020
Circuit for regulating leakage current in charge pump
WUHAN XINXIN SEMICONDUCTOR MFG3 citations71
US10340793B1Jul 2, 2019
Digital control of charge pump
WUHAN XINXIN SEMICONDUCTOR MFG1 citations62
US10482968B1Nov 19, 2019
Local x-decoder and related memory system
WUHAN XINXIN SEMICONDUCTOR MFG0 citations52
US10650866B2May 12, 2020
Charge pump drive circuit
WUHAN XINXIN SEMICONDUCTOR MFG0 citations51
US10879880B2Dec 29, 2020
Oscillator
WUHAN XINXIN SEMICONDUCTOR MFG0 citations42
US10732662B2Aug 4, 2020
Band-gap reference circuit
WUHAN XINXIN SEMICONDUCTOR MFG0 citations42
US10748618B2Aug 18, 2020
Local X-decoder and related memory system with a voltage clamping transistor
WUHAN XINXIN SEMICONDUCTOR MFG0 citations41
US10515705B1Dec 24, 2019
Removing pump noise in a sensing circuit
WUHAN XINXIN SEMICONDUCTOR MFG0 citations41
US10482967B1Nov 19, 2019
Layout structure of local x-decoder
WUHAN XINXIN SEMICONDUCTOR MFG0 citations41
US10770153B2Sep 8, 2020
Charge pump drive circuit with two switch signals
WUHAN XINXIN SEMICONDUCTOR MFG0 citations39
US10684316B2Jun 16, 2020
Voltage detection circuit for charge pump
WUHAN XINXIN SEMICONDUCTOR MFG0 citations36
EON SILICON DEVICES INC
6 patentsUS6490203B1Dec 3, 2002
Sensing scheme of flash EEPROM
EON SILICON DEVICES INC71 citations96
US6222771B1Apr 24, 2001
Unified program method and circuitry in flash EEPROM
EON SILICON DEVICES INC45 citations92
US5966330AOct 12, 1999
Method and apparatus for measuring the threshold voltage of flash EEPROM memory cells being applied a variable control gate bias
EON SILICON DEVICES INC52 citations92
US6172915B1Jan 9, 2001
Unified erase method in flash EEPROM
EON SILICON DEVICES INC35 citations88
US6023426AFeb 8, 2000
Method of achieving narrow VT distribution after erase in flash EEPROM
EON SILICON DEVICES INC9 citations73
US6680257B2Jan 20, 2004
Alternative related to SAS in flash EEPROM
EON SILICON DEVICES INC1 citations52