Inventor
AN JOONG-IL
KR4 patents
Patents
4 patentsUS6326322B1Dec 4, 2001
Method for depositing a silicon nitride layer
SAMSUNG ELECTRONICS CO LTD431 citations96
US6265261B1Jul 24, 2001
Semiconductor device and fabricating method therefor in which a netride layer in a capacitor is formed in a shortened time period
SAMSUNG ELECTRONICS CO LTD13 citations68
US6265264B1Jul 24, 2001
Method of doping and HSG surface of a capacitor electrode with PH3 under a low temperature/high pressure processing condition
SAMSUNG ELECTRONICS CO LTD2 citations57
US6015758AJan 18, 2000
Method of stripping a wafer of its film with gas injected into a CVD apparatus in which the wafer is disposed
SAMSUNG ELECTRONICS CO LTD1 citations48