P

Inventor

FUJIMOTO HIDETOSHI

JP85 patents
⚠️ This page may combine multiple inventors who share the name “FUJIMOTO HIDETOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

29 patents
US6242761B1Jun 5, 2001

Nitride compound semiconductor light emitting device

TOSHIBA KK243 citations99
US5864171AJan 26, 1999

Semiconductor optoelectric device and method of manufacturing the same

TOSHIBA KK161 citations99
US5786606AJul 28, 1998

Semiconductor light-emitting device

TOSHIBA KK242 citations99
US6057565AMay 2, 2000

Semiconductor light emitting device including a non-stoichiometric compound layer and manufacturing method thereof

TOSHIBA KK93 citations98
US5998810ADec 7, 1999

Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer

TOSHIBA KK100 citations98
US5994205ANov 30, 1999

Method of separating semiconductor devices

TOSHIBA KK100 citations98
US5932896AAug 3, 1999

Nitride system semiconductor device with oxygen

TOSHIBA KK111 citations98
US6281524B1Aug 28, 2001

Semiconductor light-emitting device

TOSHIBA KK122 citations97
US6404792B2Jun 11, 2002

Semiconductor light-emitting device

TOSHIBA KK65 citations96
US6258617B1Jul 10, 2001

Method of manufacturing blue light emitting element

TOSHIBA KK61 citations96
US6204084B1Mar 20, 2001

Nitride system semiconductor device and method for manufacturing the same

TOSHIBA KK50 citations96
US6147364ANov 14, 2000

Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan

TOSHIBA KK68 citations96
US6121634ASep 19, 2000

Nitride semiconductor light emitting device and its manufacturing method

TOSHIBA KK72 citations96
US6118801ASep 12, 2000

Gallium nitride-based compound semiconductor laser and method of manufacturing the same

TOSHIBA KK51 citations96
US6080599AJun 27, 2000

Semiconductor optoelectric device and method of manufacturing the same

TOSHIBA KK37 citations96
US5987048ANov 16, 1999

Gallium nitride-based compound semiconductor laser and method of manufacturing the same

TOSHIBA KK76 citations96
US5903017AMay 11, 1999

Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN

TOSHIBA KK75 citations96
US5780873AJul 14, 1998

Semiconductor device capable of easily forming cavity and its manufacturing method

TOSHIBA KK68 citations96
US5740192AApr 14, 1998

Semiconductor laser

TOSHIBA KK93 citations96
US5693963ADec 2, 1997

Compound semiconductor device with nitride

TOSHIBA KK96 citations96
US6611003B1Aug 26, 2003

Light emitting element and method of fabrication thereof

TOSHIBA KK58 citations95
US6252894B1Jun 26, 2001

Semiconductor laser using gallium nitride series compound semiconductor

TOSHIBA KK132 citations95
US6498050B2Dec 24, 2002

Bipolar transistor, semiconductor light emitting device and semiconductor device

TOSHIBA KK19 citations93
US6359919B1Mar 19, 2002

Gallium nitride-based compound semiconductor laser and method of manufacturing the same

TOSHIBA KK35 citations93
US5966396AOct 12, 1999

Gallium nitride-based compound semiconductor laser and method of manufacturing the same

TOSHIBA KK40 citations93
US5281831AJan 25, 1994

Optical semiconductor device

TOSHIBA KK36 citations92
US7538366B2May 26, 2009

Nitride semiconductor device

TOSHIBA KK17 citations83
US6835963B2Dec 28, 2004

Light-emitting element and method of fabrication thereof

TOSHIBA KK18 citations83
US6605486B2Aug 12, 2003

Bipolar transistor, semiconductor light emitting device and semiconductor device

TOSHIBA KK11 citations74

SHARP KK

8 patents

DENSO CORP

3 patents

NIPPON DENSO CO

2 patents

SAITO WATARU

2 patents

TOYOTA MOTOR CO LTD

1 patent

AISIN AW CO

1 patent

IIDA KATSUHIRO

1 patent

YOSHIOKA AKIRA

1 patent

SAITO YASUNOBU

1 patent

NIPPON SIGNAL CO LTD

1 patent

Showing the top 50 of 85 patents by PatentIndex Score.