Inventor
AL-SHAREEF HUSAM N
US38 patents
⚠️ This page may combine multiple inventors who share the name “AL-SHAREEF HUSAM N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
37 patentsUS6872639B2Mar 29, 2005
Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
MICRON TECHNOLOGY INC43 citations96
US6458645B2Oct 1, 2002
Capacitor having tantalum oxynitride film and method for making same
MICRON TECHNOLOGY INC41 citations96
US6281543B1Aug 28, 2001
Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same
MICRON TECHNOLOGY INC47 citations96
US6191443B1Feb 20, 2001
Capacitors, methods of forming capacitors, and DRAM memory cells
MICRON TECHNOLOGY INC52 citations96
US6162744ADec 19, 2000
Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers
MICRON TECHNOLOGY INC62 citations96
US6124164ASep 26, 2000
Method of making integrated capacitor incorporating high K dielectric
MICRON TECHNOLOGY INC42 citations96
US6864527B2Mar 8, 2005
Capacitor having tantalum oxynitride film and method for making same
MICRON TECHNOLOGY INC18 citations93
US6351005B1Feb 26, 2002
Integrated capacitor incorporating high K dielectric
MICRON TECHNOLOGY INC31 citations93
US6316800B1Nov 13, 2001
Boride electrodes and barriers for cell dielectrics
MICRON TECHNOLOGY INC17 citations93
US6111285AAug 29, 2000
Boride electrodes and barriers for cell dielectrics
MICRON TECHNOLOGY INC17 citations93
US6082375AJul 4, 2000
Method of processing internal surfaces of a chemical vapor deposition reactor
MICRON TECHNOLOGY INC17 citations93
US6291364B1Sep 18, 2001
Method and apparatus for stabilizing high pressure oxidation of a semiconductor device
MICRON TECHNOLOGY INC18 citations92
US6423649B2Jul 23, 2002
Method and apparatus for stabilizing high pressure oxidation of a semiconductor device
MICRON TECHNOLOGY INC17 citations91
US6255186B1Jul 3, 2001
Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom
MICRON TECHNOLOGY INC27 citations90
US6943392B2Sep 13, 2005
Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
MICRON TECHNOLOGY INC16 citations84
US6400552B2Jun 4, 2002
Capacitor with conductively doped Si-Ge alloy electrode
MICRON TECHNOLOGY INC13 citations82
US6596651B2Jul 22, 2003
Method for stabilizing high pressure oxidation of a semiconductor device
MICRON TECHNOLOGY INC11 citations81
US7206215B2Apr 17, 2007
Antifuse having tantalum oxynitride film and method for making same
MICRON TECHNOLOGY INC9 citations74
US7038265B2May 2, 2006
Capacitor having tantalum oxynitride film and method for making same
MICRON TECHNOLOGY INC4 citations74
US6773981B1Aug 10, 2004
Methods of forming capacitors
MICRON TECHNOLOGY INC10 citations74
US6720607B1Apr 13, 2004
Method for improving the resistance degradation of thin film capacitors
MICRON TECHNOLOGY INC7 citations74
US6673689B2Jan 6, 2004
Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same
MICRON TECHNOLOGY INC12 citations74
US6614082B1Sep 2, 2003
Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
MICRON TECHNOLOGY INC8 citations74
US6613654B1Sep 2, 2003
Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
MICRON TECHNOLOGY INC11 citations74
US6610211B1Aug 26, 2003
Method of processing internal surfaces of a chemical vapor deposition reactor
MICRON TECHNOLOGY INC7 citations74
US6518121B2Feb 11, 2003
Boride electrodes and barriers for cell dielectrics
MICRON TECHNOLOGY INC9 citations74
US6399459B2Jun 4, 2002
Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same
MICRON TECHNOLOGY INC4 citations74
US6258655B1Jul 10, 2001
Method for improving the resistance degradation of thin film capacitors
MICRON TECHNOLOGY INC12 citations74
US6239459B1May 29, 2001
Capacitors, methods of forming capacitors and integrated circuitry
MICRON TECHNOLOGY INC8 citations71
US7176079B2Feb 13, 2007
Method of fabricating a semiconductor device with a wet oxidation with steam process
MICRON TECHNOLOGY INC2 citations63
US7022623B2Apr 4, 2006
Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process
MICRON TECHNOLOGY INC2 citations63
US7064052B2Jun 20, 2006
Method of processing a transistor gate dielectric film with stem
MICRON TECHNOLOGY INC0 citations52
US6949477B2Sep 27, 2005
Method of fabricating a capacitive element for a semiconductor device
MICRON TECHNOLOGY INC0 citations52
US7410911B2Aug 12, 2008
Method for stabilizing high pressure oxidation of a semiconductor device
MICRON TECHNOLOGY INC0 citations51
US7282457B2Oct 16, 2007
Apparatus for stabilizing high pressure oxidation of a semiconductor device
MICRON TECHNOLOGY INC0 citations51
US7279435B2Oct 9, 2007
Apparatus for stabilizing high pressure oxidation of a semiconductor device
MICRON TECHNOLOGY INC0 citations51
US6955996B2Oct 18, 2005
Method for stabilizing high pressure oxidation of a semiconductor device
MICRON TECHNOLOGY INC0 citations50