P

Inventor

LETAVIC THEODORE

US31 patents
⚠️ This page may combine multiple inventors who share the name “LETAVIC THEODORE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PHILIPS ELECTRONICS NA

12 patents
US6346451B1Feb 12, 2002

Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode

PHILIPS ELECTRONICS NA234 citations99
US6127703AOct 3, 2000

Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region

PHILIPS ELECTRONICS NA97 citations98
US6310378B1Oct 30, 2001

High voltage thin film transistor with improved on-state characteristics and method for making same

PHILIPS ELECTRONICS NA57 citations96
US6313489B1Nov 6, 2001

Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device

PHILIPS ELECTRONICS NA137 citations95
US6191453B1Feb 20, 2001

Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology

PHILIPS ELECTRONICS NA59 citations93
US6221737B1Apr 24, 2001

Method of making semiconductor devices with graded top oxide and graded drift region

PHILIPS ELECTRONICS NA25 citations92
US6023090AFeb 8, 2000

Lateral thin-film Silicon-On-Insulator (SOI) device having multiple zones in the drift region

PHILIPS ELECTRONICS NA46 citations92
US5973341AOct 26, 1999

Lateral thin-film silicon-on-insulator (SOI) JFET device

PHILIPS ELECTRONICS NA67 citations92
US5969387AOct 19, 1999

Lateral thin-film SOI devices with graded top oxide and graded drift region

PHILIPS ELECTRONICS NA27 citations92
US6232636B1May 15, 2001

Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region

PHILIPS ELECTRONICS NA16 citations84
US6133591AOct 17, 2000

Silicon-on-insulator (SOI) hybrid transistor device structure

PHILIPS ELECTRONICS NA11 citations68
US6096663AAug 1, 2000

Method of forming a laterally-varying charge profile in silicon carbide substrate

PHILIPS ELECTRONICS NA3 citations61

GLOBALFOUNDRIES US INC

8 patents

NXP BV

5 patents

KONINKL PHILIPS ELECTRONICS NV

4 patents

PHILIPS NORTH AMERICA CORP

1 patent

GLOBALFOUNDRIES INC

1 patent