Inventor
LETAVIC THEODORE
US31 patents
⚠️ This page may combine multiple inventors who share the name “LETAVIC THEODORE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PHILIPS ELECTRONICS NA
12 patentsUS6346451B1Feb 12, 2002
Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode
PHILIPS ELECTRONICS NA234 citations99
US6127703AOct 3, 2000
Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region
PHILIPS ELECTRONICS NA97 citations98
US6310378B1Oct 30, 2001
High voltage thin film transistor with improved on-state characteristics and method for making same
PHILIPS ELECTRONICS NA57 citations96
US6313489B1Nov 6, 2001
Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device
PHILIPS ELECTRONICS NA137 citations95
US6191453B1Feb 20, 2001
Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology
PHILIPS ELECTRONICS NA59 citations93
US6221737B1Apr 24, 2001
Method of making semiconductor devices with graded top oxide and graded drift region
PHILIPS ELECTRONICS NA25 citations92
US6023090AFeb 8, 2000
Lateral thin-film Silicon-On-Insulator (SOI) device having multiple zones in the drift region
PHILIPS ELECTRONICS NA46 citations92
US5973341AOct 26, 1999
Lateral thin-film silicon-on-insulator (SOI) JFET device
PHILIPS ELECTRONICS NA67 citations92
US5969387AOct 19, 1999
Lateral thin-film SOI devices with graded top oxide and graded drift region
PHILIPS ELECTRONICS NA27 citations92
US6232636B1May 15, 2001
Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region
PHILIPS ELECTRONICS NA16 citations84
US6133591AOct 17, 2000
Silicon-on-insulator (SOI) hybrid transistor device structure
PHILIPS ELECTRONICS NA11 citations68
US6096663AAug 1, 2000
Method of forming a laterally-varying charge profile in silicon carbide substrate
PHILIPS ELECTRONICS NA3 citations61
GLOBALFOUNDRIES US INC
8 patentsUS11536903B1Dec 27, 2022
Hybrid edge couplers with stacked inverse tapers
GLOBALFOUNDRIES US INC7 citations85
US11846804B2Dec 19, 2023
Thermally-conductive features positioned adjacent to an optical component
GLOBALFOUNDRIES US INC2 citations72
US12585064B2Mar 24, 2026
Photonics chips with an integrated semiconductor laser
GLOBALFOUNDRIES US INC0 citations62
US12174420B2Dec 24, 2024
Thermally-conductive features positioned adjacent to an optical component
GLOBALFOUNDRIES US INC0 citations61
US11828984B2Nov 28, 2023
Thermal management of an optical component for temperature control
GLOBALFOUNDRIES US INC0 citations61
US12529852B2Jan 20, 2026
Photonic structures including multiple input/output optical couplers
GLOBALFOUNDRIES US INC0 citations60
US11822120B2Nov 21, 2023
Optical components with enhanced heat dissipation
GLOBALFOUNDRIES US INC0 citations51
US11934021B2Mar 19, 2024
Photonic devices integrated with thermally conductive layers
GLOBALFOUNDRIES US INC0 citations46
NXP BV
5 patentsUS7989881B2Aug 2, 2011
Semiconductor device structure with a tapered field plate and cylindrical drift region geometry
NXP BV0 citations52
US7968938B2Jun 28, 2011
High-voltage device structure
NXP BV0 citations52
US7544998B2Jun 9, 2009
Prevention of parasitic channel in an integrated SOI process
NXP BV0 citations52
US7439585B2Oct 21, 2008
Silicon-on-insulator device
NXP BV0 citations52
US7485916B2Feb 3, 2009
Dynamic control of capacitance elements in field effect structures
NXP BV0 citations51
KONINKL PHILIPS ELECTRONICS NV
4 patentsUS6518814B1Feb 11, 2003
High-voltage capacitor voltage divider circuit having a high-voltage silicon-on-insulation (SOI) capacitor
KONINKL PHILIPS ELECTRONICS NV25 citations92
US6717214B2Apr 6, 2004
SOI-LDMOS device with integral voltage sense electrodes
KONINKL PHILIPS ELECTRONICS NV15 citations87
US6833726B2Dec 21, 2004
SOI-LDMOS device with integral voltage sense electrodes
KONINKL PHILIPS ELECTRONICS NV7 citations73
US6661059B1Dec 9, 2003
Lateral insulated gate bipolar PMOS device
KONINKL PHILIPS ELECTRONICS NV3 citations62