P

Inventor

YEO GI-SUNG

KR35 patents
⚠️ This page may combine multiple inventors who share the name “YEO GI-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

33 patents
US7221031B2May 22, 2007

Semiconductor device having sufficient process margin and method of forming same

SAMSUNG ELECTRONICS CO LTD115 citations98
US5759755AJun 2, 1998

Semiconductor substrate containing anti-reflective layer

SAMSUNG ELECTRONICS CO LTD54 citations96
US8003543B2Aug 23, 2011

Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD21 citations92
US7732341B2Jun 8, 2010

Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD18 citations92
US7540970B2Jun 2, 2009

Methods of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD27 citations92
US8026044B2Sep 27, 2011

Method of forming fine patterns of semiconductor device

SAMSUNG ELECTRONICS CO LTD22 citations91
US7001697B2Feb 21, 2006

Photomask having a transparency-adjusting layer, method of manufacturing the photomask, and exposure method using the photomask

SAMSUNG ELECTRONICS CO LTD41 citations91
US7873935B2Jan 18, 2011

Method of manufacturing a mask

SAMSUNG ELECTRONICS CO LTD16 citations84
US7539970B2May 26, 2009

Method of manufacturing mask

SAMSUNG ELECTRONICS CO LTD15 citations84
US7604907B2Oct 20, 2009

Multi-exposure semiconductor fabrication mask sets and methods of fabricating such multi-exposure mask sets

SAMSUNG ELECTRONICS CO LTD8 citations83
US7064051B2Jun 20, 2006

Method of forming self-aligned contact pads of non-straight type semiconductor memory device

SAMSUNG ELECTRONICS CO LTD11 citations83
US5593725AJan 14, 1997

Anti-reflective layer and method for manufacturing semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD15 citations82
US7687369B2Mar 30, 2010

Method of forming fine metal patterns for a semiconductor device using a damascene process

SAMSUNG ELECTRONICS CO LTD7 citations74
US6537713B2Mar 25, 2003

Multilayer alignment keys and alignment method using the same

SAMSUNG ELECTRONICS CO LTD12 citations74
US7862988B2Jan 4, 2011

Method for forming patterns of semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7795099B2Sep 14, 2010

Semiconductor devices having Fin-type active areas and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7518704B2Apr 14, 2009

Multiple exposure apparatus and multiple exposure method using the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US9673195B2Jun 6, 2017

Semiconductor device having sufficient process margin and method of forming same

SAMSUNG ELECTRONICS CO LTD1 citations62
US7787301B2Aug 31, 2010

Flash memory device using double patterning technology and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations62
US7582899B2Sep 1, 2009

Semiconductor device having overlay measurement mark and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US7452825B2Nov 18, 2008

Method of forming a mask structure and method of forming a minute pattern using the same

SAMSUNG ELECTRONICS CO LTD5 citations62
US7375390B2May 20, 2008

Semiconductor memory device having high electrical performance and mask and photolithography friendliness

SAMSUNG ELECTRONICS CO LTD3 citations62
US7259065B2Aug 21, 2007

Method of forming trench in semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations62
US7176512B2Feb 13, 2007

Semiconductor memory device having high electrical performance and mask and photolithography friendliness

SAMSUNG ELECTRONICS CO LTD4 citations62
US8013374B2Sep 6, 2011

Semiconductor memory devices including offset bit lines

SAMSUNG ELECTRONICS CO LTD2 citations61
US8013375B2Sep 6, 2011

Semiconductor memory devices including diagonal bit lines

SAMSUNG ELECTRONICS CO LTD4 citations57
US7670761B2Mar 2, 2010

Method of forming a fine pattern of a semiconductor device using a resist reflow measurement key

SAMSUNG ELECTRONICS CO LTD0 citations52
US7547936B2Jun 16, 2009

Semiconductor memory devices including offset active regions

SAMSUNG ELECTRONICS CO LTD1 citations51
US7221014B2May 22, 2007

DRAM devices having an increased density layout

SAMSUNG ELECTRONICS CO LTD1 citations51
US7842451B2Nov 30, 2010

Method of forming pattern

SAMSUNG ELECTRONICS CO LTD0 citations50
US7575855B2Aug 18, 2009

Method of forming pattern

SAMSUNG ELECTRONICS CO LTD0 citations50
US7723702B2May 25, 2010

E-beam lithography system for synchronously irradiating a plurality of photomasks and method of fabricating photomasks using the same

SAMSUNG ELECTRONICS CO LTD0 citations46
US7550383B2Jun 23, 2009

Methods of performing a photolithography process for forming asymmetric patterns and methods of forming a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD0 citations42

KOH CHA-WON

1 patent

RYOO MAN-HYOUNG

1 patent