Inventor
YEO GI-SUNG
KR35 patents
⚠️ This page may combine multiple inventors who share the name “YEO GI-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS7221031B2May 22, 2007
Semiconductor device having sufficient process margin and method of forming same
SAMSUNG ELECTRONICS CO LTD115 citations98
US5759755AJun 2, 1998
Semiconductor substrate containing anti-reflective layer
SAMSUNG ELECTRONICS CO LTD54 citations96
US8003543B2Aug 23, 2011
Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD21 citations92
US7732341B2Jun 8, 2010
Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD18 citations92
US7540970B2Jun 2, 2009
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD27 citations92
US8026044B2Sep 27, 2011
Method of forming fine patterns of semiconductor device
SAMSUNG ELECTRONICS CO LTD22 citations91
US7001697B2Feb 21, 2006
Photomask having a transparency-adjusting layer, method of manufacturing the photomask, and exposure method using the photomask
SAMSUNG ELECTRONICS CO LTD41 citations91
US7873935B2Jan 18, 2011
Method of manufacturing a mask
SAMSUNG ELECTRONICS CO LTD16 citations84
US7539970B2May 26, 2009
Method of manufacturing mask
SAMSUNG ELECTRONICS CO LTD15 citations84
US7604907B2Oct 20, 2009
Multi-exposure semiconductor fabrication mask sets and methods of fabricating such multi-exposure mask sets
SAMSUNG ELECTRONICS CO LTD8 citations83
US7064051B2Jun 20, 2006
Method of forming self-aligned contact pads of non-straight type semiconductor memory device
SAMSUNG ELECTRONICS CO LTD11 citations83
US5593725AJan 14, 1997
Anti-reflective layer and method for manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD15 citations82
US7687369B2Mar 30, 2010
Method of forming fine metal patterns for a semiconductor device using a damascene process
SAMSUNG ELECTRONICS CO LTD7 citations74
US6537713B2Mar 25, 2003
Multilayer alignment keys and alignment method using the same
SAMSUNG ELECTRONICS CO LTD12 citations74
US7862988B2Jan 4, 2011
Method for forming patterns of semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations63
US7795099B2Sep 14, 2010
Semiconductor devices having Fin-type active areas and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7518704B2Apr 14, 2009
Multiple exposure apparatus and multiple exposure method using the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US9673195B2Jun 6, 2017
Semiconductor device having sufficient process margin and method of forming same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7787301B2Aug 31, 2010
Flash memory device using double patterning technology and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7582899B2Sep 1, 2009
Semiconductor device having overlay measurement mark and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7452825B2Nov 18, 2008
Method of forming a mask structure and method of forming a minute pattern using the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US7375390B2May 20, 2008
Semiconductor memory device having high electrical performance and mask and photolithography friendliness
SAMSUNG ELECTRONICS CO LTD3 citations62
US7259065B2Aug 21, 2007
Method of forming trench in semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations62
US7176512B2Feb 13, 2007
Semiconductor memory device having high electrical performance and mask and photolithography friendliness
SAMSUNG ELECTRONICS CO LTD4 citations62
US8013374B2Sep 6, 2011
Semiconductor memory devices including offset bit lines
SAMSUNG ELECTRONICS CO LTD2 citations61
US8013375B2Sep 6, 2011
Semiconductor memory devices including diagonal bit lines
SAMSUNG ELECTRONICS CO LTD4 citations57
US7670761B2Mar 2, 2010
Method of forming a fine pattern of a semiconductor device using a resist reflow measurement key
SAMSUNG ELECTRONICS CO LTD0 citations52
US7547936B2Jun 16, 2009
Semiconductor memory devices including offset active regions
SAMSUNG ELECTRONICS CO LTD1 citations51
US7221014B2May 22, 2007
DRAM devices having an increased density layout
SAMSUNG ELECTRONICS CO LTD1 citations51
US7842451B2Nov 30, 2010
Method of forming pattern
SAMSUNG ELECTRONICS CO LTD0 citations50
US7575855B2Aug 18, 2009
Method of forming pattern
SAMSUNG ELECTRONICS CO LTD0 citations50
US7723702B2May 25, 2010
E-beam lithography system for synchronously irradiating a plurality of photomasks and method of fabricating photomasks using the same
SAMSUNG ELECTRONICS CO LTD0 citations46
US7550383B2Jun 23, 2009
Methods of performing a photolithography process for forming asymmetric patterns and methods of forming a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations42