P

Inventor

PARK NAE MAN

KR10 patents
⚠️ This page may combine multiple inventors who share the name “PARK NAE MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOREA ELECTRONICS TELECOMM

6 patents
US6998643B2Feb 14, 2006

Silicon-based light emitting diode

KOREA ELECTRONICS TELECOMM8 citations71
US8022444B2Sep 20, 2011

Biosensor and method of manufacturing the same

KOREA ELECTRONICS TELECOMM3 citations62
US7772587B2Aug 10, 2010

Silicon-based light emitting diode for enhancing light extraction efficiency and method of fabricating the same

KOREA ELECTRONICS TELECOMM2 citations62
US7671377B2Mar 2, 2010

Silicon based light emitting diode

KOREA ELECTRONICS TELECOMM5 citations62
US7982231B2Jul 19, 2011

Silicon-based light emitting diode using side reflecting mirror

KOREA ELECTRONICS TELECOMM1 citations51
US7791095B2Sep 7, 2010

Semiconductor light emitting diode

KOREA ELECTRONICS TELECOMM0 citations51

KWANGJU INST SCI & TECH

1 patent
US6544870B2Apr 8, 2003

Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same

KWANGJU INST SCI & TECH45 citations92

KWAGJU INST OF SCIENCE AND TEC

1 patent
US6773946B2Aug 10, 2004

Method for fabricating light-emitting diode using nanosize nitride semiconductor multiple quantum wells

KWAGJU INST OF SCIENCE AND TEC24 citations87

ELECTRONICS & TELECOMMUNICATIONS RES INST

1 patent
US11393981B2Jul 19, 2022

Method of manufacturing a cellulose nanocrystal semiconductor material

ELECTRONICS & TELECOMMUNICATIONS RES INST0 citations58

KIM TAE YOUB

1 patent
US8222055B2Jul 17, 2012

Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device

KIM TAE YOUB1 citations49