Inventor
GUPTA SUBHASH
SG98 patents
⚠️ This page may combine multiple inventors who share the name “GUPTA SUBHASH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
26 patentsUS6348407B1Feb 19, 2002
Method to improve adhesion of organic dielectrics in dual damascene interconnects
CHARTERED SEMICONDUCTOR MFG250 citations99
US6284657B1Sep 4, 2001
Non-metallic barrier formation for copper damascene type interconnects
CHARTERED SEMICONDUCTOR MFG190 citations99
US6683002B1Jan 27, 2004
Method to create a copper diffusion deterrent interface
CHARTERED SEMICONDUCTOR MFG71 citations98
US6380087B1Apr 30, 2002
CMP process utilizing dummy plugs in damascene process
CHARTERED SEMICONDUCTOR MFG89 citations98
US6352917B1Mar 5, 2002
Reversed damascene process for multiple level metal interconnects
CHARTERED SEMICONDUCTOR MFG140 citations98
US6274499B1Aug 14, 2001
Method to avoid copper contamination during copper etching and CMP
CHARTERED SEMICONDUCTOR MFG98 citations98
US6184138B1Feb 6, 2001
Method to create a controllable and reproducible dual copper damascene structure
CHARTERED SEMICONDUCTOR MFG121 citations98
US6114243ASep 5, 2000
Method to avoid copper contamination on the sidewall of a via or a dual damascene structure
CHARTERED SEMICONDUCTOR MFG123 citations98
US6566260B2May 20, 2003
Non-metallic barrier formations for copper damascene type interconnects
CHARTERED SEMICONDUCTOR MFG32 citations96
US6489233B2Dec 3, 2002
Non-metallic barrier formations for copper damascene type interconnects
CHARTERED SEMICONDUCTOR MFG36 citations96
US6372636B1Apr 16, 2002
Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene
CHARTERED SEMICONDUCTOR MFG70 citations96
US6251786B1Jun 26, 2001
Method to create a copper dual damascene structure with less dishing and erosion
CHARTERED SEMICONDUCTOR MFG65 citations96
US6225221B1May 1, 2001
Method to deposit a copper seed layer for dual damascene interconnects
CHARTERED SEMICONDUCTOR MFG53 citations95
US6380084B1Apr 30, 2002
Method to form high performance copper damascene interconnects by de-coupling via and metal line filling
CHARTERED SEMICONDUCTOR MFG59 citations94
US6350675B1Feb 26, 2002
Integration of silicon-rich material in the self-aligned via approach of dual damascene interconnects
CHARTERED SEMICONDUCTOR MFG55 citations93
US6740580B1May 25, 2004
Method to form copper interconnects by adding an aluminum layer to the copper diffusion barrier
CHARTERED SEMICONDUCTOR MFG40 citations92
US6720204B2Apr 13, 2004
Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding
CHARTERED SEMICONDUCTOR MFG38 citations92
US6531390B2Mar 11, 2003
Non-metallic barrier formations for copper damascene type interconnects
CHARTERED SEMICONDUCTOR MFG19 citations92
US6475810B1Nov 5, 2002
Method of manufacturing embedded organic stop layer for dual damascene patterning
CHARTERED SEMICONDUCTOR MFG24 citations92
US6465888B2Oct 15, 2002
Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene
CHARTERED SEMICONDUCTOR MFG33 citations92
US6429117B1Aug 6, 2002
Method to create copper traps by modifying treatment on the dielectrics surface
CHARTERED SEMICONDUCTOR MFG21 citations92
US6429122B2Aug 6, 2002
Non metallic barrier formations for copper damascene type interconnects
CHARTERED SEMICONDUCTOR MFG25 citations92
US6417088B1Jul 9, 2002
Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bonding
CHARTERED SEMICONDUCTOR MFG44 citations92
US6394114B1May 28, 2002
Method for stripping copper in damascene interconnects
CHARTERED SEMICONDUCTOR MFG20 citations92
US6378759B1Apr 30, 2002
Method of application of conductive cap-layer in flip-chip, COB, and micro metal bonding
CHARTERED SEMICONDUCTOR MFG37 citations92
US6340608B1Jan 22, 2002
Method of fabricating copper metal bumps for flip-chip or chip-on-board IC bonding on terminating copper pads
CHARTERED SEMICONDUCTOR MFG21 citations92
ADVANCED MICRO DEVICES INC
18 patentsUS5705430AJan 6, 1998
Dual damascene with a sacrificial via fill
ADVANCED MICRO DEVICES INC173 citations99
US5614765AMar 25, 1997
Self aligned via dual damascene
ADVANCED MICRO DEVICES INC172 citations99
US5795823AAug 18, 1998
Self aligned via dual damascene
ADVANCED MICRO DEVICES INC114 citations98
US5926690AJul 20, 1999
Run-to-run control process for controlling critical dimensions
ADVANCED MICRO DEVICES INC346 citations97
US5691238ANov 25, 1997
Subtractive dual damascene
ADVANCED MICRO DEVICES INC68 citations96
US5686354ANov 11, 1997
Dual damascene with a protective mask for via etching
ADVANCED MICRO DEVICES INC80 citations96
US6040619AMar 21, 2000
Semiconductor device including antireflective etch stop layer
ADVANCED MICRO DEVICES INC67 citations95
US6365320B1Apr 2, 2002
Process for forming anti-reflective film for semiconductor fabrication using extremely short wavelength deep ultraviolet photolithography
ADVANCED MICRO DEVICES INC24 citations93
US6172421B1Jan 9, 2001
Semiconductor device having an intermetallic layer on metal interconnects
ADVANCED MICRO DEVICES INC29 citations93
US5348615ASep 20, 1994
Selective planarization method using regelation
ADVANCED MICRO DEVICES INC27 citations93
US6313018B1Nov 6, 2001
Process for fabricating semiconductor device including antireflective etch stop layer
ADVANCED MICRO DEVICES INC20 citations92
US6066578AMay 23, 2000
Method and system for providing inorganic vapor surface treatment for photoresist adhesion promotion
ADVANCED MICRO DEVICES INC20 citations92
US5910453AJun 8, 1999
Deep UV anti-reflection coating etch
ADVANCED MICRO DEVICES INC77 citations92
US5841196ANov 24, 1998
Fluted via formation for superior metal step coverage
ADVANCED MICRO DEVICES INC47 citations92
US5770519AJun 23, 1998
Copper reservoir for reducing electromigration effects associated with a conductive via in a semiconductor device
ADVANCED MICRO DEVICES INC49 citations92
US5746884AMay 5, 1998
Fluted via formation for superior metal step coverage
ADVANCED MICRO DEVICES INC47 citations92
US5639691AJun 17, 1997
Copper pellet for reducing electromigration effects associated with a conductive via in a semiconductor device
ADVANCED MICRO DEVICES INC19 citations92
US4992134AFeb 12, 1991
Dopant-independent polysilicon plasma etch
ADVANCED MICRO DEVICES INC32 citations92
ANDERSEN CONSULTING
2 patentsTEXAS INSTRUMENTS INC
2 patentsGUPTA SUBHASH
1 patentTEXAS INSTR INCORPORATE
1 patentShowing the top 50 of 98 patents by PatentIndex Score.