Inventor
YANG DAE GEUN
US11 patents
Patents
11 patentsUS8753940B1Jun 17, 2014
Methods of forming isolation structures and fins on a FinFET semiconductor device
GLOBALFOUNDRIES INC72 citations97
US9159630B1Oct 13, 2015
Fin field-effect transistor (FinFET) device formed using a single spacer, double hardmask scheme
GLOBALFOUNDRIES INC32 citations93
US9735154B2Aug 15, 2017
Semiconductor structure having gap fill dielectric layer disposed between fins
GLOBALFOUNDRIES INC9 citations83
US9105478B2Aug 11, 2015
Devices and methods of forming fins at tight fin pitches
GLOBALFOUNDRIES INC9 citations83
US8936986B2Jan 20, 2015
Methods of forming finfet devices with a shared gate structure
GLOBALFOUNDRIES INC8 citations83
US8697501B1Apr 15, 2014
Semiconductor device having a gate formed on a uniform surface and method for forming the same
GLOBALFOUNDRIES INC17 citations83
US8993445B2Mar 31, 2015
Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection
GLOBALFOUNDRIES INC5 citations71
US8969205B2Mar 3, 2015
Double patterning via triangular shaped sidewall spacers
GLOBALFOUNDRIES INC2 citations62
US9196499B2Nov 24, 2015
Method of forming semiconductor fins
GLOBALFOUNDRIES INC3 citations61
US9147696B2Sep 29, 2015
Devices and methods of forming finFETs with self aligned fin formation
GLOBALFOUNDRIES INC2 citations61
US9034767B1May 19, 2015
Facilitating mask pattern formation
GLOBALFOUNDRIES INC0 citations51