Inventor
MORRIS DANIEL H
US33 patents
⚠️ This page may combine multiple inventors who share the name “MORRIS DANIEL H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
32 patentsUS11355505B2Jun 7, 2022
Vertical backend transistor with ferroelectric material
INTEL CORP11 citations86
US10651182B2May 12, 2020
Three-dimensional ferroelectric NOR-type memory
INTEL CORP15 citations86
US11037614B2Jun 15, 2021
Imprint-free write driver for ferroelectric memory
INTEL CORP6 citations83
US11450675B2Sep 20, 2022
One transistor and one ferroelectric capacitor memory cells in diagonal arrangements
INTEL CORP2 citations73
US11355504B2Jun 7, 2022
Anti-ferroelectric capacitor memory cell
INTEL CORP2 citations73
US10998339B2May 4, 2021
One transistor and ferroelectric FET based memory cell
INTEL CORP3 citations73
US10832761B2Nov 10, 2020
Polarization gate stack SRAM
INTEL CORP3 citations73
US10748602B2Aug 18, 2020
Nonvolatile SRAM
INTEL CORP3 citations73
US10734378B2Aug 4, 2020
Transistor threshold voltage variation optimization
INTEL CORP2 citations73
US10559349B2Feb 11, 2020
Polarization gate stack SRAM
INTEL CORP1 citations73
US9997227B2Jun 12, 2018
Non-volatile ferroelectric logic with granular power-gating
INTEL CORP2 citations73
US9985611B2May 29, 2018
Tunnel field-effect transistor (TFET) based high-density and low-power sequential
INTEL CORP4 citations73
US11171145B2Nov 9, 2021
Memory devices based on capacitors with built-in electric field
INTEL CORP3 citations70
US11522130B2Dec 6, 2022
Metal insulator transition field programmable routing block
INTEL CORP0 citations62
US11502103B2Nov 15, 2022
Memory cell with a ferroelectric capacitor integrated with a transtor gate
INTEL CORP0 citations62
US11495596B2Nov 8, 2022
Logic-embedded diode/tunnel diode coupled to floating gate with I-V characteristics suitable for logic state retention
INTEL CORP0 citations62
US11232832B2Jan 25, 2022
Polarization gate stack SRAM
INTEL CORP0 citations62
US10901486B2Jan 26, 2021
Configurable interconnect apparatus and method
INTEL CORP0 citations62
US10573385B2Feb 25, 2020
Ferroelectric based memory cell with non-volatile retention
INTEL CORP1 citations62
US10261923B2Apr 16, 2019
Configurable interconnect apparatus and method
INTEL CORP1 citations62
US11004868B2May 11, 2021
Memory field-effect transistors and methods of manufacturing the same
INTEL CORP0 citations61
US10886286B2Jan 5, 2021
Vertical memory control circuitry located in interconnect layers
INTEL CORP0 citations52
US10720504B2Jul 21, 2020
Transistor with dynamic threshold voltage for low-leakage standby and high speed active mode
INTEL CORP0 citations52
US10707846B2Jul 7, 2020
Tunnel field-effect transistor (TFET) based high-density and low-power sequential
INTEL CORP0 citations52
US10553694B2Feb 4, 2020
Transistors with temperature compensating gate structures
INTEL CORP0 citations52
US9842643B2Dec 12, 2017
Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors
INTEL CORP0 citations52
US9490780B2Nov 8, 2016
Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors
INTEL CORP0 citations52
US10777250B2Sep 15, 2020
Save-restore circuitry with metal-ferroelectric-metal devices
INTEL CORP0 citations51
US11734174B2Aug 22, 2023
Low overhead, high bandwidth re-configurable interconnect apparatus and method
INTEL CORP0 citations50
US11735652B2Aug 22, 2023
Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure
INTEL CORP0 citations50
US10720438B2Jul 21, 2020
Memory array with ferroelectric elements
INTEL CORP0 citations42
US10355005B2Jul 16, 2019
Semi-volatile embedded memory with between-fin floating-gate device and method
INTEL CORP0 citations39