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Inventor

MORRIS DANIEL H

US33 patents
⚠️ This page may combine multiple inventors who share the name “MORRIS DANIEL H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

32 patents
US11355505B2Jun 7, 2022

Vertical backend transistor with ferroelectric material

INTEL CORP11 citations86
US10651182B2May 12, 2020

Three-dimensional ferroelectric NOR-type memory

INTEL CORP15 citations86
US11037614B2Jun 15, 2021

Imprint-free write driver for ferroelectric memory

INTEL CORP6 citations83
US11450675B2Sep 20, 2022

One transistor and one ferroelectric capacitor memory cells in diagonal arrangements

INTEL CORP2 citations73
US11355504B2Jun 7, 2022

Anti-ferroelectric capacitor memory cell

INTEL CORP2 citations73
US10998339B2May 4, 2021

One transistor and ferroelectric FET based memory cell

INTEL CORP3 citations73
US10832761B2Nov 10, 2020

Polarization gate stack SRAM

INTEL CORP3 citations73
US10748602B2Aug 18, 2020

Nonvolatile SRAM

INTEL CORP3 citations73
US10734378B2Aug 4, 2020

Transistor threshold voltage variation optimization

INTEL CORP2 citations73
US10559349B2Feb 11, 2020

Polarization gate stack SRAM

INTEL CORP1 citations73
US9997227B2Jun 12, 2018

Non-volatile ferroelectric logic with granular power-gating

INTEL CORP2 citations73
US9985611B2May 29, 2018

Tunnel field-effect transistor (TFET) based high-density and low-power sequential

INTEL CORP4 citations73
US11171145B2Nov 9, 2021

Memory devices based on capacitors with built-in electric field

INTEL CORP3 citations70
US11522130B2Dec 6, 2022

Metal insulator transition field programmable routing block

INTEL CORP0 citations62
US11502103B2Nov 15, 2022

Memory cell with a ferroelectric capacitor integrated with a transtor gate

INTEL CORP0 citations62
US11495596B2Nov 8, 2022

Logic-embedded diode/tunnel diode coupled to floating gate with I-V characteristics suitable for logic state retention

INTEL CORP0 citations62
US11232832B2Jan 25, 2022

Polarization gate stack SRAM

INTEL CORP0 citations62
US10901486B2Jan 26, 2021

Configurable interconnect apparatus and method

INTEL CORP0 citations62
US10573385B2Feb 25, 2020

Ferroelectric based memory cell with non-volatile retention

INTEL CORP1 citations62
US10261923B2Apr 16, 2019

Configurable interconnect apparatus and method

INTEL CORP1 citations62
US11004868B2May 11, 2021

Memory field-effect transistors and methods of manufacturing the same

INTEL CORP0 citations61
US10886286B2Jan 5, 2021

Vertical memory control circuitry located in interconnect layers

INTEL CORP0 citations52
US10720504B2Jul 21, 2020

Transistor with dynamic threshold voltage for low-leakage standby and high speed active mode

INTEL CORP0 citations52
US10707846B2Jul 7, 2020

Tunnel field-effect transistor (TFET) based high-density and low-power sequential

INTEL CORP0 citations52
US10553694B2Feb 4, 2020

Transistors with temperature compensating gate structures

INTEL CORP0 citations52
US9842643B2Dec 12, 2017

Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors

INTEL CORP0 citations52
US9490780B2Nov 8, 2016

Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors

INTEL CORP0 citations52
US10777250B2Sep 15, 2020

Save-restore circuitry with metal-ferroelectric-metal devices

INTEL CORP0 citations51
US11734174B2Aug 22, 2023

Low overhead, high bandwidth re-configurable interconnect apparatus and method

INTEL CORP0 citations50
US11735652B2Aug 22, 2023

Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure

INTEL CORP0 citations50
US10720438B2Jul 21, 2020

Memory array with ferroelectric elements

INTEL CORP0 citations42
US10355005B2Jul 16, 2019

Semi-volatile embedded memory with between-fin floating-gate device and method

INTEL CORP0 citations39

MORRIS DANIEL H

1 patent