Inventor
ZHANG JINGYAN
US16 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG JINGYAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KREUPL FRANZ
3 patentsUS8237146B2Aug 7, 2012
Memory cell with silicon-containing carbon switching layer and methods for forming the same
KREUPL FRANZ91 citations97
US8520424B2Aug 27, 2013
Composition of memory cell with resistance-switching layers
KREUPL FRANZ7 citations84
US8471360B2Jun 25, 2013
Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
KREUPL FRANZ4 citations62
ZHANG JINGYAN
3 patentsUS8699259B2Apr 15, 2014
Non-volatile storage system using opposite polarity programming signals for MIM memory cell
ZHANG JINGYAN46 citations93
US8152918B2Apr 10, 2012
Methods for epitaxial silicon growth
ZHANG JINGYAN2 citations61
US9217209B2Dec 22, 2015
Methods for epitaxial silicon growth
ZHANG JINGYAN0 citations50