Inventor
GEORGESCU SORIN S
US24 patents
⚠️ This page may combine multiple inventors who share the name “GEORGESCU SORIN S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CATALYST SEMICONDUCTOR INC
11 patentsUS7324380B2Jan 29, 2008
Method for trimming the temperature coefficient of a floating gate voltage reference
CATALYST SEMICONDUCTOR INC52 citations92
US7323742B2Jan 29, 2008
Non-volatile memory integrated circuit
CATALYST SEMICONDUCTOR INC24 citations92
US7557641B2Jul 7, 2009
Fractional charge pump for step-down DC-DC converter
CATALYST SEMICONDUCTOR INC21 citations90
US6989562B2Jan 24, 2006
Non-volatile memory integrated circuit
CATALYST SEMICONDUCTOR INC11 citations84
US7236046B2Jun 26, 2007
LED bias current control using adaptive fractional charge pump
CATALYST SEMICONDUCTOR INC14 citations82
US7149123B2Dec 12, 2006
Non-volatile CMOS reference circuit
CATALYST SEMICONDUCTOR INC18 citations82
US7547944B2Jun 16, 2009
Scalable electrically eraseable and programmable memory (EEPROM) cell array
CATALYST SEMICONDUCTOR INC11 citations81
US7528436B2May 5, 2009
Scalable electrically eraseable and programmable memory
CATALYST SEMICONDUCTOR INC12 citations81
US7245536B1Jul 17, 2007
Precision non-volatile CMOS reference circuit
CATALYST SEMICONDUCTOR INC12 citations81
US7042380B2May 9, 2006
Digital potentiometer with resistor binary weighting decoding
CATALYST SEMICONDUCTOR INC12 citations79
US7558111B2Jul 7, 2009
Non-volatile memory cell in standard CMOS process
CATALYST SEMICONDUCTOR INC5 citations60
SEMICONDUCTOR COMPONENTS IND
6 patentsUS7602232B2Oct 13, 2009
Programmable fractional charge pump for DC-DC converter
SEMICONDUCTOR COMPONENTS IND16 citations82
US7616501B2Nov 10, 2009
Method for reducing charge loss in analog floating gate cell
SEMICONDUCTOR COMPONENTS IND7 citations67
US7633114B2Dec 15, 2009
Non-volatile memory integrated circuit
SEMICONDUCTOR COMPONENTS IND2 citations62
US7920424B2Apr 5, 2011
Scalable electrically eraseable and programmable memory (EEPROM) cell array
SEMICONDUCTOR COMPONENTS IND4 citations59
US7682907B2Mar 23, 2010
Non-volatile memory integrated circuit
SEMICONDUCTOR COMPONENTS IND0 citations52
US7830714B2Nov 9, 2010
Non-volatile memory with high reliability
SEMICONDUCTOR COMPONENTS IND0 citations39
POWER INTEGRATIONS INC
4 patentsUS11824438B2Nov 21, 2023
Deadtime adjustment for a power converter
POWER INTEGRATIONS INC2 citations69
US12568673B2Mar 3, 2026
Lateral surface gate vertical field effect transistor with adjustable output capacitance
POWER INTEGRATIONS INC0 citations61
US11824094B2Nov 21, 2023
Silicon carbide junction field effect transistors
POWER INTEGRATIONS INC0 citations60
US11316042B2Apr 26, 2022
Process and structure for a superjunction device
POWER INTEGRATIONS INC0 citations51
GEORGESCU SORIN S
3 patentsUS8750041B2Jun 10, 2014
Scalable electrically erasable and programmable memory
GEORGESCU SORIN S6 citations69
US8093650B2Jan 10, 2012
Scalable electrically eraseable and programmable memory (EEPROM) cell array
GEORGESCU SORIN S3 citations58
US8139408B2Mar 20, 2012
Scalable electrically eraseable and programmable memory
GEORGESCU SORIN S5 citations55