Inventor
SHARAN SUJIT
US199 patents
⚠️ This page may combine multiple inventors who share the name “SHARAN SUJIT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
45 patentsUS6756293B2Jun 29, 2004
Combined gate cap or digit line and spacer deposition using HDP
MICRON TECHNOLOGY INC495 citations99
US6499425B1Dec 31, 2002
Quasi-remote plasma processing method and apparatus
MICRON TECHNOLOGY INC326 citations99
US5735960AApr 7, 1998
Apparatus and method to increase gas residence time in a reactor
MICRON TECHNOLOGY INC119 citations99
US6110820AAug 29, 2000
Low scratch density chemical mechanical planarization process
MICRON TECHNOLOGY INC126 citations98
US5990021ANov 23, 1999
Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture
MICRON TECHNOLOGY INC156 citations98
US5882978AMar 16, 1999
Methods of forming a silicon nitride film, a capacitor dielectric layer and a capacitor
MICRON TECHNOLOGY INC99 citations98
US5664988ASep 9, 1997
Process of polishing a semiconductor wafer having an orientation edge discontinuity shape
MICRON TECHNOLOGY INC140 citations98
US5533924AJul 9, 1996
Polishing apparatus, a polishing wafer carrier apparatus, a replacable component for a particular polishing apparatus and a process of polishing wafers
MICRON TECHNOLOGY INC198 citations98
US7268078B2Sep 11, 2007
Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
MICRON TECHNOLOGY INC50 citations96
US6412437B1Jul 2, 2002
Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
MICRON TECHNOLOGY INC54 citations96
US6368988B1Apr 9, 2002
Combined gate cap or digit line and spacer deposition using HDP
MICRON TECHNOLOGY INC48 citations96
US6291341B1Sep 18, 2001
Method for PECVD deposition of selected material films
MICRON TECHNOLOGY INC81 citations96
US6268282B1Jul 31, 2001
Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
MICRON TECHNOLOGY INC52 citations96
US6112697ASep 5, 2000
RF powered plasma enhanced chemical vapor deposition reactor and methods
MICRON TECHNOLOGY INC59 citations96
US6057200AMay 2, 2000
Method of making a field effect transistor having an elevated source and an elevated drain
MICRON TECHNOLOGY INC38 citations96
US5997634ADec 7, 1999
Method of forming a crystalline phase material
MICRON TECHNOLOGY INC27 citations96
US5976976ANov 2, 1999
Method of forming titanium silicide and titanium by chemical vapor deposition
MICRON TECHNOLOGY INC65 citations96
US5946594AAug 31, 1999
Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
MICRON TECHNOLOGY INC42 citations96
US5929526AJul 27, 1999
Removal of metal cusp for improved contact fill
MICRON TECHNOLOGY INC52 citations96
US5846881ADec 8, 1998
Low cost DRAM metallization
MICRON TECHNOLOGY INC52 citations96
US5747116AMay 5, 1998
Method of forming an electrical contact to a silicon substrate
MICRON TECHNOLOGY INC88 citations96
US5731235AMar 24, 1998
Methods of forming a silicon nitrite film, a capacitor dielectric layer and a capacitor
MICRON TECHNOLOGY INC76 citations96
US5637518AJun 10, 1997
Method of making a field effect transistor having an elevated source and an elevated drain
MICRON TECHNOLOGY INC37 citations96
US5644166AJul 1, 1997
Sacrificial CVD germanium layer for formation of high aspect ratio submicron VLSI contacts
MICRON TECHNOLOGY INC96 citations95
US5700716ADec 23, 1997
Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers
MICRON TECHNOLOGY INC60 citations94
US6977225B2Dec 20, 2005
Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
MICRON TECHNOLOGY INC12 citations93
US6749717B1Jun 15, 2004
Device for in-situ cleaning of an inductively-coupled plasma chambers
MICRON TECHNOLOGY INC24 citations93
US6727173B2Apr 27, 2004
Semiconductor processing methods of forming an utilizing antireflective material layers, and methods of forming transistor gate stacks
MICRON TECHNOLOGY INC23 citations93
US6686288B1Feb 3, 2004
Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture
MICRON TECHNOLOGY INC30 citations93
US6472756B2Oct 29, 2002
Method of forming titanium silicide and titanium by chemical vapor deposition and resulting apparatus
MICRON TECHNOLOGY INC15 citations93
US6468925B2Oct 22, 2002
Plasma enhanced chemical vapor deposition process
MICRON TECHNOLOGY INC44 citations93
US6423626B1Jul 23, 2002
Removal of metal cusp for improved contact fill
MICRON TECHNOLOGY INC19 citations93
US6388284B2May 14, 2002
Capacitor structures
MICRON TECHNOLOGY INC44 citations93
US6331493B1Dec 18, 2001
Process for making low dielectric constant dielectric films
MICRON TECHNOLOGY INC28 citations93
US6291289B2Sep 18, 2001
Method of forming DRAM trench capacitor with metal layer over hemispherical grain polysilicon
MICRON TECHNOLOGY INC41 citations93
US6255216B1Jul 3, 2001
Methods of forming a contact having titanium silicide and titanium formed by chemical vapor deposition
MICRON TECHNOLOGY INC21 citations93
US6235646B1May 22, 2001
RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
MICRON TECHNOLOGY INC16 citations93
US6227141B1May 8, 2001
RF powered plasma enhanced chemical vapor deposition reactor and methods
MICRON TECHNOLOGY INC35 citations93
US6208033B1Mar 27, 2001
Apparatus having titanium silicide and titanium formed by chemical vapor deposition
MICRON TECHNOLOGY INC17 citations93
US6184136B1Feb 6, 2001
Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
MICRON TECHNOLOGY INC18 citations93
US6140249AOct 31, 2000
Low dielectric constant dielectric films and process for making the same
MICRON TECHNOLOGY INC16 citations93
US6086442AJul 11, 2000
Method of forming field emission devices
MICRON TECHNOLOGY INC26 citations93
US6067680AMay 30, 2000
Semiconductor processing method of forming a conductively doped semiconductive material plug within a contact opening
MICRON TECHNOLOGY INC42 citations93
US6054191AApr 25, 2000
Method of forming an electrical contact to a silicon substrate
MICRON TECHNOLOGY INC28 citations93
US6027970AFeb 22, 2000
Method of increasing capacitance of memory cells incorporating hemispherical grained silicon
MICRON TECHNOLOGY INC39 citations93
INTEL CORP
3 patentsUS10177083B2Jan 8, 2019
Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages
INTEL CORP39 citations98
US10236209B2Mar 19, 2019
Passive components in vias in a stacked integrated circuit package
INTEL CORP22 citations94
US7527722B2May 5, 2009
Electrochemical mechanical planarization
INTEL CORP22 citations93
BRAUNISCH HENNING
1 patent(unassigned)
1 patentShowing the top 50 of 199 patents by PatentIndex Score.