Inventor
SUGIURA JUN
JP26 patents
⚠️ This page may combine multiple inventors who share the name “SUGIURA JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
20 patentsUS6737318B2May 18, 2004
Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
HITACHI LTD105 citations99
US5504029AApr 2, 1996
Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs
HITACHI LTD99 citations97
US5780882AJul 14, 1998
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD33 citations96
US5331191AJul 19, 1994
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD24 citations96
US5202275AApr 13, 1993
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD43 citations96
US5153685AOct 6, 1992
Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
HITACHI LTD72 citations96
US5309392AMay 3, 1994
Semiconductor IC device using ferroelectric material in data storage cells with light assisted state transition
HITACHI LTD22 citations93
US5134301AJul 28, 1992
Ion implanting apparatus, having ion contacting surfaces made of high purity silicon, for fabricating semiconductor integrated circuit devices
HITACHI LTD87 citations93
US5930624AJul 27, 1999
Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring
HITACHI LTD22 citations92
US6548847B2Apr 15, 2003
Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal film
HITACHI LTD12 citations82
US6342412B1Jan 29, 2002
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD8 citations82
US6169324B1Jan 2, 2001
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD13 citations82
US6127255AOct 3, 2000
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD8 citations82
US5811316ASep 22, 1998
Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring
HITACHI LTD8 citations82
US5739589AApr 14, 1998
Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same
HITACHI LTD13 citations82
US5753550AMay 19, 1998
Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
HITACHI LTD7 citations74
US5557147ASep 17, 1996
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD7 citations74
US5286666AFeb 15, 1994
Method of producing semiconductor memory device
HITACHI LTD11 citations74
US5116775AMay 26, 1992
Method of producing semiconductor memory device with buried barrier layer
HITACHI LTD7 citations74
US5051812ASep 24, 1991
Semiconductor device and method for manufacturing the same
HITACHI LTD19 citations73