Inventor
HORIIKE YASUHIRO
JP46 patents
⚠️ This page may combine multiple inventors who share the name “HORIIKE YASUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO SHIBAURA ELECTRIC CO
12 patentsUS4492610AJan 8, 1985
Dry Etching method and device therefor
TOKYO SHIBAURA ELECTRIC CO72 citations96
US4431473AFeb 14, 1984
RIE Apparatus utilizing a shielded magnetron to enhance etching
TOKYO SHIBAURA ELECTRIC CO65 citations96
US4065369ADec 27, 1977
Activated gas reaction apparatus & method
TOKYO SHIBAURA ELECTRIC CO81 citations96
US4151034AApr 24, 1979
Continuous gas plasma etching apparatus
TOKYO SHIBAURA ELECTRIC CO121 citations95
US4277304AJul 7, 1981
Ion source and ion etching process
TOKYO SHIBAURA ELECTRIC CO61 citations93
US4123663AOct 31, 1978
Gas-etching device
TOKYO SHIBAURA ELECTRIC CO44 citations93
US4526643AJul 2, 1985
Dry etching apparatus using reactive ions
TOKYO SHIBAURA ELECTRIC CO46 citations92
US4252595AFeb 24, 1981
Etching apparatus using a plasma
TOKYO SHIBAURA ELECTRIC CO46 citations92
US4160690AJul 10, 1979
Gas etching method and apparatus
TOKYO SHIBAURA ELECTRIC CO53 citations92
US4094722AJun 13, 1978
Etching apparatus using a plasma
TOKYO SHIBAURA ELECTRIC CO41 citations92
US4192706AMar 11, 1980
Gas-etching device
TOKYO SHIBAURA ELECTRIC CO28 citations82
US4175235ANov 20, 1979
Apparatus for the plasma treatment of semiconductors
TOKYO SHIBAURA ELECTRIC CO29 citations82
TOSHIBA KK
9 patentsUS4838978AJun 13, 1989
Dry etching apparatus
TOSHIBA KK70 citations96
US4529475AJul 16, 1985
Dry etching apparatus and method using reactive gases
TOSHIBA KK68 citations96
US4878995ANov 7, 1989
Method of dry etching and apparatus for use in such method
TOSHIBA KK30 citations93
US4786361ANov 22, 1988
Dry etching process
TOSHIBA KK28 citations93
US4698238AOct 6, 1987
Pattern-forming method
TOSHIBA KK25 citations93
US4668337AMay 26, 1987
Dry-etching method and apparatus therefor
TOSHIBA KK29 citations93
US4642171AFeb 10, 1987
Phototreating apparatus
TOSHIBA KK32 citations93
US5112645AMay 12, 1992
Phototreating method and apparatus therefor
TOSHIBA KK4 citations63
US4844774AJul 4, 1989
Phototreating method and apparatus therefor
TOSHIBA KK3 citations63
TOKYO ELECTRON LTD
7 patentsUS5698036ADec 16, 1997
Plasma processing apparatus
TOKYO ELECTRON LTD502 citations99
US5487785AJan 30, 1996
Plasma treatment apparatus
TOKYO ELECTRON LTD152 citations99
US5290609AMar 1, 1994
Method of forming dielectric film for semiconductor devices
TOKYO ELECTRON LTD123 citations98
US6155200ADec 5, 2000
ECR plasma generator and an ECR system using the generator
TOKYO ELECTRON LTD45 citations93
US5851600ADec 22, 1998
Plasma process method and apparatus
TOKYO ELECTRON LTD35 citations93
US5308791AMay 3, 1994
Method and apparatus for processing surface of semiconductor layer
TOKYO ELECTRON LTD21 citations93
US6096176AAug 1, 2000
Sputtering method and a sputtering apparatus thereof
TOKYO ELECTRON LTD11 citations74
SPEEDFAM CO LTD
4 patentsUS6159388ADec 12, 2000
Plasma etching method and plasma etching system for carrying out the same
SPEEDFAM CO LTD26 citations92
US6254718B1Jul 3, 2001
Combined CMP and plasma etching wafer flattening system
SPEEDFAM CO LTD9 citations72
US6496748B1Dec 17, 2002
Wafer flattening process and storage medium
SPEEDFAM CO LTD2 citations63
US6316369B1Nov 13, 2001
Corrosion-resistant system and method for a plasma etching apparatus
SPEEDFAM CO LTD6 citations63
NAT INST FOR MATERIALS SCIENCE
3 patentsUS7972577B2Jul 5, 2011
Chip using method and test chip
NAT INST FOR MATERIALS SCIENCE11 citations83
US7691328B2Apr 6, 2010
Chip using method and test chip
NAT INST FOR MATERIALS SCIENCE7 citations73
US7678577B2Mar 16, 2010
Blood analysis apparatus and blood analysis method
NAT INST FOR MATERIALS SCIENCE2 citations62