Inventor
YANAGIYA SATOSHI
JP10 patents
Patents
10 patentsUS5321289AJun 14, 1994
Vertical MOSFET having trench covered with multilayer gate film
TOSHIBA KK164 citations98
US5126807AJun 30, 1992
Vertical MOS transistor and its production method
TOSHIBA KK193 citations98
US5578508ANov 26, 1996
Vertical power MOSFET and process of fabricating the same
TOSHIBA KK135 citations97
US5242845ASep 7, 1993
Method of production of vertical MOS transistor
TOSHIBA KK121 citations97
US5770514AJun 23, 1998
Method for manufacturing a vertical transistor having a trench gate
TOSHIBA KK59 citations96
US5726088AMar 10, 1998
Method of manufacturing a semiconductor device having a buried insulated gate
TOSHIBA KK30 citations92
US5610422AMar 11, 1997
Semiconductor device having a buried insulated gate
TOSHIBA KK35 citations92
US5589421ADec 31, 1996
Method of manufacturing annealed films
TOSHIBA KK27 citations92
US5084408AJan 28, 1992
Method of making complete dielectric isolation structure in semiconductor integrated circuit
TOSHIBA KK36 citations92
US4984052AJan 8, 1991
Bonded substrate of semiconductor elements having a high withstand voltage
TOSHIBA KK15 citations73