Inventor
MCLAURY LOREN L
US53 patents
⚠️ This page may combine multiple inventors who share the name “MCLAURY LOREN L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
41 patentsUS6122211ASep 19, 2000
Fast, low power, write scheme for memory circuits using pulsed off isolation device
MICRON TECHNOLOGY INC419 citations99
US5768178AJun 16, 1998
Data transfer circuit in a memory device
MICRON TECHNOLOGY INC196 citations99
US5655105AAug 5, 1997
Method and apparatus for multiple latency synchronous pipelined dynamic random access memory
MICRON TECHNOLOGY INC161 citations99
US5506811AApr 9, 1996
Dynamic memory with isolated digit lines
MICRON TECHNOLOGY INC447 citations99
US5452259ASep 19, 1995
Multiport memory with pipelined serial input
MICRON TECHNOLOGY INC176 citations99
US5282177AJan 25, 1994
Multiple register block write method and circuit for video DRAMs
MICRON TECHNOLOGY INC147 citations99
US6130856AOct 10, 2000
Method and apparatus for multiple latency synchronous dynamic random access memory
MICRON TECHNOLOGY INC37 citations96
US5813023ASep 22, 1998
Method and apparatus for multiple latency synchronous dynamic random access memory
MICRON TECHNOLOGY INC50 citations96
US5793688AAug 11, 1998
Method for multiple latency synchronous dynamic random access memory
MICRON TECHNOLOGY INC55 citations96
US5710741AJan 20, 1998
Power up intialization circuit responding to an input signal
MICRON TECHNOLOGY INC43 citations96
US5650976AJul 22, 1997
Dual strobed negative pumped wordlines for dynamic random access memories
MICRON TECHNOLOGY INC44 citations96
US5325502AJun 28, 1994
Pipelined SAM register serial output
MICRON TECHNOLOGY INC81 citations96
US5926433AJul 20, 1999
Dual strobed negative pumped worldlines for dynamic random access memories
MICRON TECHNOLOGY INC18 citations93
US5754478AMay 19, 1998
Fast, low power, write scheme for memory circuits using pulsed off isolation device
MICRON TECHNOLOGY INC19 citations93
US5657287AAug 12, 1997
Enhanced multiple block writes to adjacent blocks of memory using a sequential counter
MICRON TECHNOLOGY INC41 citations93
US5657266AAug 12, 1997
Single ended transfer circuit
MICRON TECHNOLOGY INC32 citations93
US5654933AAug 5, 1997
Equilibrated sam read transfer circuit
MICRON TECHNOLOGY INC24 citations93
US5579278ANov 26, 1996
Multiport memory with pipelined serial input
MICRON TECHNOLOGY INC30 citations93
US5553028ASep 3, 1996
Single P-sense AMP circuit using depletion isolation devices
MICRON TECHNOLOGY INC22 citations93
US5500817AMar 19, 1996
True tristate output buffer and a method for driving a potential of an output pad to three distinct conditions
MICRON TECHNOLOGY INC21 citations93
US5311478AMay 10, 1994
Integrated circuit memory with asymmetric row access topology
MICRON TECHNOLOGY INC33 citations93
US5265050ANov 23, 1993
Integrated circuit memory with isolation of column line portions through P-sense amplification period
MICRON TECHNOLOGY INC27 citations93
US5245578ASep 14, 1993
DRAM with a two stage voltage pull-down sense amplifier
MICRON TECHNOLOGY INC29 citations93
US5202587AApr 13, 1993
MOSFET gate substrate bias sensor
MICRON TECHNOLOGY INC36 citations93
US6452866B2Sep 17, 2002
Method and apparatus for multiple latency synchronous dynamic random access memory
MICRON TECHNOLOGY INC12 citations82
US6359831B1Mar 19, 2002
Method and apparatus for multiple latency synchronous dynamic random access memory
MICRON TECHNOLOGY INC13 citations82
US6549481B2Apr 15, 2003
Power up initialization circuit responding to an input signal
MICRON TECHNOLOGY INC7 citations74
US6424594B1Jul 23, 2002
Method and apparatus for multiple latency synchronous dynamic random access memory
MICRON TECHNOLOGY INC3 citations74
US6363025B1Mar 26, 2002
Power up initialization circuit responding to an input signal
MICRON TECHNOLOGY INC13 citations74
US6101142AAug 8, 2000
Power up initialization circuit responding to an input signal
MICRON TECHNOLOGY INC5 citations74
US5923592AJul 13, 1999
Fast, low power, write scheme for memory circuits using pulsed off isolation device
MICRON TECHNOLOGY INC5 citations74
US5912855AJun 15, 1999
Power up initialization circuit responding to an input signal
MICRON TECHNOLOGY INC10 citations74
US5901111AMay 4, 1999
Enhanced multiple block writes to adjacent block of memory using a sequential counter
MICRON TECHNOLOGY INC6 citations74
US5896339AApr 20, 1999
Multi-bit block write in a random access memory
MICRON TECHNOLOGY INC13 citations74
US5659518AAug 19, 1997
Multi-port memory with multiple function access cycles and transfers with simultaneous random access
MICRON TECHNOLOGY INC13 citations74
US5612922AMar 18, 1997
Page mode editable real time read transfer
MICRON TECHNOLOGY INC10 citations74
US5559749ASep 24, 1996
Multi-bit block write in a random access memory
MICRON TECHNOLOGY INC6 citations74
US5488584AJan 30, 1996
Circuit and method for externally controlling signal development in a serial access memory
MICRON TECHNOLOGY INC10 citations74
US6625064B1Sep 23, 2003
Fast, low power, write scheme for memory circuits using pulsed off isolation device
MICRON TECHNOLOGY INC2 citations63
US6021084AFeb 1, 2000
Multi-bit block write in a random access memory
MICRON TECHNOLOGY INC4 citations63
US5594474AJan 14, 1997
VRAM having isolated array sections for providing write functions that will not affect other array sections
MICRON TECHNOLOGY INC4 citations63
MICRON SEMICONDUCTOR INC
4 patentsUS5369622ANov 29, 1994
Memory with isolated digit lines
MICRON SEMICONDUCTOR INC161 citations99
US5636175AJun 3, 1997
Row decoder/driver circuit for determining non selected wordlines and for driving non-selected wordlines to a potential less than the lowest potential of the digit lines
MICRON SEMICONDUCTOR INC26 citations93
US5410508AApr 25, 1995
Pumped wordlines
MICRON SEMICONDUCTOR INC39 citations93
US5394172AFeb 28, 1995
VRAM having isolated array sections for providing write functions that will not affect other array sections
MICRON SEMICONDUCTOR INC22 citations93
LATTICE SEMICONDUCTOR CORP
4 patentsUS6917536B1Jul 12, 2005
Memory access circuit and method for reading and writing data with the same clock signal
LATTICE SEMICONDUCTOR CORP22 citations92
US12512143B2Dec 30, 2025
Dual power supplied memory cells and deterministic reset thereof for programmable logic devices
LATTICE SEMICONDUCTOR CORP0 citations63
US12373117B2Jul 29, 2025
Selectively powered embedded memory systems and methods
LATTICE SEMICONDUCTOR CORP0 citations58
US7512015B1Mar 31, 2009
Negative voltage blocking for embedded memories
LATTICE SEMICONDUCTOR CORP0 citations52
MICRON TECHNOLOGIES INC
1 patentShowing the top 50 of 53 patents by PatentIndex Score.