P

Inventor

LIN CHIA-HUI

TW69 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHIA-HUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

22 patents
US7176137B2Feb 13, 2007

Method for multiple spacer width control

TAIWAN SEMICONDUCTOR MFG101 citations98
US6022644AFeb 8, 2000

Mask containing subresolution line to minimize proximity effect of contact hole

TAIWAN SEMICONDUCTOR MFG69 citations96
US6982135B2Jan 3, 2006

Pattern compensation for stitching

TAIWAN SEMICONDUCTOR MFG54 citations95
US6875655B2Apr 5, 2005

Method of forming DRAM capacitors with protected outside crown surface for more robust structures

TAIWAN SEMICONDUCTOR MFG63 citations95
US6210841B1Apr 3, 2001

Approach to increase the resolution of dense line/space patterns for 0.18 micron and below design rules using attenuating phase shifting masks

TAIWAN SEMICONDUCTOR MFG21 citations93
US6183916B1Feb 6, 2001

Method for proximity effect compensation on alternative phase-shift masks with bias and optical proximity correction

TAIWAN SEMICONDUCTOR MFG20 citations93
US6077633AJun 20, 2000

Mask and method of forming a mask for avoiding side lobe problems in forming contact holes

TAIWAN SEMICONDUCTOR MFG30 citations93
US6051347AApr 18, 2000

Application of e-beam proximity over-correction to compensate optical proximity effect in optical lithography process

TAIWAN SEMICONDUCTOR MFG27 citations93
US5994009ANov 30, 1999

Interlayer method utilizing CAD for process-induced proximity effect correction

TAIWAN SEMICONDUCTOR MFG67 citations93
US5858591AJan 12, 1999

Optical proximity correction during wafer processing through subfile bias modification with subsequent subfile merging

TAIWAN SEMICONDUCTOR MFG28 citations93
US6943077B2Sep 13, 2005

Selective spacer layer deposition method for forming spacers with different widths

TAIWAN SEMICONDUCTOR MFG24 citations92
US6294295B1Sep 25, 2001

Variable transmittance phase shifter to compensate for side lobe problem on rim type attenuating phase shifting masks

TAIWAN SEMICONDUCTOR MFG26 citations92
US5783337AJul 21, 1998

Process to fabricate a double layer attenuated phase shift mask (APSM) with chrome border

TAIWAN SEMICONDUCTOR MFG39 citations92
US5888678AMar 30, 1999

Mask and simplified method of forming a mask integrating attenuating phase shifting mask patterns and binary mask patterns on the same mask substrate

TAIWAN SEMICONDUCTOR MFG25 citations91
US8021992B2Sep 20, 2011

High aspect ratio gap fill application using high density plasma chemical vapor deposition

TAIWAN SEMICONDUCTOR MFG21 citations90
US6746900B1Jun 8, 2004

Method for forming a semiconductor device having high-K gate dielectric material

TAIWAN SEMICONDUCTOR MFG17 citations84
US6174801B1Jan 16, 2001

E-beam direct writing to pattern step profiles of dielectric layers applied to fill poly via with poly line, contact with metal line, and metal via with metal line

TAIWAN SEMICONDUCTOR MFG17 citations83
US6955984B2Oct 18, 2005

Surface treatment of metal interconnect lines

TAIWAN SEMICONDUCTOR MFG12 citations81
US7271103B2Sep 18, 2007

Surface treated low-k dielectric as diffusion barrier for copper metallization

TAIWAN SEMICONDUCTOR MFG8 citations74
US6586142B1Jul 1, 2003

Method to overcome image distortion of lines and contact holes in optical lithography

TAIWAN SEMICONDUCTOR MFG12 citations74
US6251547B1Jun 26, 2001

Simplified process for making an outrigger type phase shift mask

TAIWAN SEMICONDUCTOR MFG12 citations73
US6301698B1Oct 9, 2001

Method for creating the sub-resolution phase shifting pattern for outrigger type phase shifting masks

TAIWAN SEMICONDUCTOR MFG4 citations63

TAIWAN SEMICONDUCTOR MFG CO LTD

11 patents

INNOLUX CORP

6 patents

SYSGRATION LTD

5 patents

QUALCOMM INC

2 patents

TAI YU ENTERPRISE CO LTD

1 patent

SHAOXING PUSHKANG BIOTECHNOLOGY CO LTD

1 patent

IND TECH RES INST

1 patent

3M INNOVATIVE PROPERTIES CO

1 patent

Showing the top 50 of 69 patents by PatentIndex Score.