Inventor
FISCHER PAUL
US49 patents
⚠️ This page may combine multiple inventors who share the name “FISCHER PAUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
35 patentsUS10872820B2Dec 22, 2020
Integrated circuit structures
INTEL CORP22 citations92
US6358853B2Mar 19, 2002
Ceria based slurry for chemical-mechanical polishing
INTEL CORP19 citations88
US7087517B2Aug 8, 2006
Method to fabricate interconnect structures
INTEL CORP11 citations82
US11515407B2Nov 29, 2022
High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS
INTEL CORP2 citations73
US11430873B2Aug 30, 2022
Self aligned gate connected plates for group III-Nitride devices and methods of fabrication
INTEL CORP3 citations73
US11387329B2Jul 12, 2022
Tri-gate architecture multi-nanowire confined transistor
INTEL CORP2 citations73
US11037817B2Jun 15, 2021
Apparatus with multi-wafer based device and method for forming such
INTEL CORP4 citations73
US7186637B2Mar 6, 2007
Method of bonding semiconductor devices
INTEL CORP7 citations73
US11380679B2Jul 5, 2022
FET capacitor circuit architectures for tunable load and input matching
INTEL CORP3 citations70
US11715791B2Aug 1, 2023
Group III-Nitride devices on SOI substrates having a compliant layer
INTEL CORP0 citations63
US11437255B2Sep 6, 2022
Epitaxial III-N nanoribbon structures for device fabrication
INTEL CORP0 citations63
US11158712B2Oct 26, 2021
Field-effect transistors with buried gates and methods of manufacturing the same
INTEL CORP0 citations63
US12080763B2Sep 3, 2024
Silicide for group III-nitride devices and methods of fabrication
INTEL CORP0 citations62
US11948831B2Apr 2, 2024
Apparatus with multi-wafer based device and method for forming such
INTEL CORP1 citations62
US11854894B2Dec 26, 2023
Integrated circuit device structures and double-sided electrical testing
INTEL CORP0 citations62
US11757027B2Sep 12, 2023
E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown
INTEL CORP0 citations62
US11552075B2Jan 10, 2023
Group III-nitride (III-N) devices and methods of fabrication
INTEL CORP0 citations62
US11404407B2Aug 2, 2022
Implants to enlarge Schottky diode cross-sectional area for lateral current conduction
INTEL CORP0 citations62
US11387327B2Jul 12, 2022
Silicide for group III-Nitride devices and methods of fabrication
INTEL CORP0 citations62
US11362082B2Jun 14, 2022
Implanted substrate contact for in-process charging control
INTEL CORP0 citations62
US11342232B2May 24, 2022
Fabrication of Schottky barrier diode using lateral epitaxial overgrowth
INTEL CORP0 citations62
US11329132B2May 10, 2022
Transistor with polarization layer superlattice for target threshold voltage tuning
INTEL CORP0 citations62
US11610971B2Mar 21, 2023
Cap layer on a polarization layer to preserve channel sheet resistance
INTEL CORP0 citations60
US7476974B2Jan 13, 2009
Method to fabricate interconnect structures
INTEL CORP4 citations60
US11705882B2Jul 18, 2023
Acoustic resonator structure
INTEL CORP0 citations58
US12375060B2Jul 29, 2025
Digitally controlled lithographically-defined multi-frequency acoustic resonators
INTEL CORP0 citations55
US11664417B2May 30, 2023
III-N metal-insulator-semiconductor field effect transistors with multiple gate dielectric materials
INTEL CORP0 citations52
US11563098B2Jan 24, 2023
Transistor gate shape structuring approaches
INTEL CORP0 citations52
US11521964B2Dec 6, 2022
Schottky diode structures and integration with III-V transistors
INTEL CORP0 citations52
US11335800B2May 17, 2022
Work function based approaches to transistor threshold voltage tuning
INTEL CORP0 citations52
US10714446B2Jul 14, 2020
Apparatus with multi-wafer based device comprising embedded active and/or passive devices and method for forming such
INTEL CORP0 citations52
US7371685B2May 13, 2008
Low stress barrier layer removal
INTEL CORP0 citations52
US6887131B2May 3, 2005
Polishing pad design
INTEL CORP1 citations52
US11626513B2Apr 11, 2023
Antenna gate field plate on 2DEG planar FET
INTEL CORP0 citations49
US11489061B2Nov 1, 2022
Integrated programmable gate radio frequency (RF) switch
INTEL CORP0 citations48
US ARMY
4 patentsUS4634929AJan 6, 1987
Broadband multipactor device
US ARMY3 citations63
US5828164AOct 27, 1998
Thermionic cathode using oxygen deficient and fully oxidized material for high electron density emissions
US ARMY3 citations62
US5545945AAug 13, 1996
Thermionic cathode
US ARMY3 citations62
US5951352ASep 14, 1999
Methods of making thermionic cathode using oxygen deficient and fully oxidized material to enhance emissions
US ARMY0 citations52
ROCKWELL ELECTRONIC COMMERCE
3 patentsUS7043009B1May 9, 2006
Providing customer data to an automatic call distribution system agent
ROCKWELL ELECTRONIC COMMERCE20 citations88
US6574332B1Jun 3, 2003
Automatic call distribution system agent log-on with pseudo-port
ROCKWELL ELECTRONIC COMMERCE4 citations62
US6590971B1Jul 8, 2003
Automatic call distribution system contact routing with media-port
ROCKWELL ELECTRONIC COMMERCE3 citations57