Inventor
HA CHANG WAN
US73 patents
⚠️ This page may combine multiple inventors who share the name “HA CHANG WAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
33 patentsUS7453737B2Nov 18, 2008
Program method with optimized voltage level for flash memory
MICRON TECHNOLOGY INC83 citations98
US7239557B2Jul 3, 2007
Program method with optimized voltage level for flash memory
MICRON TECHNOLOGY INC48 citations96
US9165937B2Oct 20, 2015
Semiconductor devices including stair step structures, and related methods
MICRON TECHNOLOGY INC22 citations93
US7626865B2Dec 1, 2009
Charge pump operation in a non-volatile memory device
MICRON TECHNOLOGY INC13 citations93
US7483334B2Jan 27, 2009
Interleaved input signal path for multiplexed input
MICRON TECHNOLOGY INC16 citations93
US10269626B2Apr 23, 2019
Stair step formation using at least two masks
MICRON TECHNOLOGY INC12 citations92
US9417685B2Aug 16, 2016
Power management
MICRON TECHNOLOGY INC14 citations89
US10468116B2Nov 5, 2019
Methods of operating a memory device
MICRON TECHNOLOGY INC5 citations84
US9870941B2Jan 16, 2018
Stair step formation using at least two masks
MICRON TECHNOLOGY INC7 citations84
US9672156B2Jun 6, 2017
Dynamic data caches, decoders and decoding methods
MICRON TECHNOLOGY INC5 citations84
US9659950B2May 23, 2017
Semiconductor devices including stair step structures, and related methods
MICRON TECHNOLOGY INC11 citations84
US9299442B2Mar 29, 2016
Dynamic data caches, decoders and decoding methods
MICRON TECHNOLOGY INC7 citations84
US9082772B2Jul 14, 2015
Stair step formation using at least two masks
MICRON TECHNOLOGY INC8 citations84
US9001584B2Apr 7, 2015
Sub-block decoding in 3D memory
MICRON TECHNOLOGY INC8 citations84
US8656092B2Feb 18, 2014
Method for reading a multilevel cell in a non-volatile memory device
MICRON TECHNOLOGY INC6 citations84
US8018770B2Sep 13, 2011
Program and sense operations in a non-volatile memory device
MICRON TECHNOLOGY INC7 citations84
US7917685B2Mar 29, 2011
Method for reading a multilevel cell in a non-volatile memory device
MICRON TECHNOLOGY INC7 citations84
US7359243B2Apr 15, 2008
Memory cell repair using fuse programming method in a flash memory device
MICRON TECHNOLOGY INC12 citations84
US10365703B2Jul 30, 2019
Power management
MICRON TECHNOLOGY INC5 citations81
US7894264B2Feb 22, 2011
Controlling a memory device responsive to degradation
MICRON TECHNOLOGY INC6 citations74
US7663934B2Feb 16, 2010
Program method with optimized voltage level for flash memory
MICRON TECHNOLOGY INC7 citations74
US7388789B2Jun 17, 2008
NAND memory device and programming methods
MICRON TECHNOLOGY INC6 citations74
US7289363B2Oct 30, 2007
Memory cell repair using fuse programming method in a flash memory device
MICRON TECHNOLOGY INC9 citations74
US7079434B2Jul 18, 2006
Noise suppression in memory device sensing
MICRON TECHNOLOGY INC9 citations74
US11393716B2Jul 19, 2022
Devices including stair step structures, and related apparatuses and memory devices
MICRON TECHNOLOGY INC1 citations73
US10348527B2Jul 9, 2019
Testing impedance adjustment
MICRON TECHNOLOGY INC1 citations63
US9263111B2Feb 16, 2016
Sub-block disabling in 3D memory
MICRON TECHNOLOGY INC2 citations63
US8375179B2Feb 12, 2013
Method for reading a multilevel cell in a non-volatile memory device
MICRON TECHNOLOGY INC2 citations63
US8000152B2Aug 16, 2011
Charge pump operation in a non-volatile memory device
MICRON TECHNOLOGY INC2 citations63
US7995399B2Aug 9, 2011
NAND memory device and programming methods
MICRON TECHNOLOGY INC1 citations63
US7876623B2Jan 25, 2011
Program method with optimized voltage level for flash memory
MICRON TECHNOLOGY INC3 citations63
US7317647B2Jan 8, 2008
Noise suppression in memory device sensing
MICRON TECHNOLOGY INC1 citations63
US7170783B2Jan 30, 2007
Layout for NAND flash memory array having reduced word line impedance
MICRON TECHNOLOGY INC3 citations63
HA CHANG WAN
5 patentsUS8609536B1Dec 17, 2013
Stair step formation using at least two masks
HA CHANG WAN27 citations96
US8320183B2Nov 27, 2012
Controlling a memory device responsive to degradation
HA CHANG WAN8 citations84
US8711633B2Apr 29, 2014
Dynamic data caches, decoders and decoding methods
HA CHANG WAN2 citations62
US8645752B2Feb 4, 2014
Apparatuses and methods for operating a memory device
HA CHANG WAN1 citations62
US8547754B2Oct 1, 2013
Charge pump operation in a non-volatile memory device
HA CHANG WAN3 citations62
WINBOND ELECTRONICS CORP
5 patentsUS6781914B2Aug 24, 2004
Flash memory having a flexible bank partition
WINBOND ELECTRONICS CORP22 citations93
US6510084B2Jan 21, 2003
Column decoder with increased immunity to high voltage breakdown
WINBOND ELECTRONICS CORP14 citations84
US7009910B2Mar 7, 2006
Semiconductor memory having a flexible dual-bank architecture with improved row decoding
WINBOND ELECTRONICS CORP4 citations63
US6704241B1Mar 9, 2004
Memory architecture with vertical and horizontal row decoding
WINBOND ELECTRONICS CORP5 citations63
US6590810B2Jul 8, 2003
Source biasing circuit for flash EEPROM
WINBOND ELECTRONICS CORP2 citations63
HYUNDAI ELECTRONICS IND
3 patentsUS6021067AFeb 1, 2000
Circuit of sensing a fuse cell in a flash memory
HYUNDAI ELECTRONICS IND39 citations93
US5852580ADec 22, 1998
Repair fuse circuit in a flash memory device
HYUNDAI ELECTRONICS IND45 citations93
US5784317AJul 21, 1998
Flash memory device using an operational circuit for bit-by-bit verifying of programmed data in memory cells and method of programming the same
HYUNDAI ELECTRONICS IND35 citations93
INTEL CORP
3 patentsUS10942799B1Mar 9, 2021
Defective bit line management in connection with a memory access
INTEL CORP9 citations86
US10832766B2Nov 10, 2020
Program verification time reduction in non-volatile memory devices
INTEL CORP3 citations72
US11429469B2Aug 30, 2022
Defective bit line management in connection with a memory access
INTEL CORP1 citations63
SK HYNIX INC
1 patentShowing the top 50 of 73 patents by PatentIndex Score.