Inventor
STENGL JENS-PEER
DE15 patents
⚠️ This page may combine multiple inventors who share the name “STENGL JENS-PEER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
6 patentsUS6870201B1Mar 22, 2005
High voltage resistant edge structure for semiconductor components
INFINEON TECHNOLOGIES AG74 citations97
US6271562B1Aug 7, 2001
Semiconductor component which can be controlled by a field effect
INFINEON TECHNOLOGIES AG106 citations96
US6465863B1Oct 15, 2002
Power diode structure
INFINEON TECHNOLOGIES AG31 citations92
US6812524B2Nov 2, 2004
Field effect controlled semiconductor component
INFINEON TECHNOLOGIES AG12 citations74
US6309974B1Oct 30, 2001
Method for eliminating residual oxygen impurities from silicon wafers pulled from a crucible
INFINEON TECHNOLOGIES AG7 citations73
US6831327B2Dec 14, 2004
Vertically structured power semiconductor component
INFINEON TECHNOLOGIES AG1 citations52
SIEMENS AG
3 patentsUS6037631AMar 14, 2000
Semiconductor component with a high-voltage endurance edge structure
SIEMENS AG28 citations91
US4459498AJul 10, 1984
Switch with series-connected MOS-FETs
SIEMENS AG52 citations90
US5726478AMar 10, 1998
Integrated power semiconductor component having a substrate with a protective structure in the substrate
SIEMENS AG5 citations62