Inventor
HAN MIN-KOO
KR38 patents
⚠️ This page may combine multiple inventors who share the name “HAN MIN-KOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS7563659B2Jul 21, 2009
Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same
SAMSUNG ELECTRONICS CO LTD259 citations99
US5593909AJan 14, 1997
Method for fabricating a MOS transistor having an offset resistance
SAMSUNG ELECTRONICS CO LTD106 citations97
US5894157AApr 13, 1999
MOS transistor having an offset resistance derived from a multiple region gate electrode
SAMSUNG ELECTRONICS CO LTD79 citations95
US5891776AApr 6, 1999
Methods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniques
SAMSUNG ELECTRONICS CO LTD73 citations94
US5907181AMay 25, 1999
Tapered dielectric microelectronic structures and associated methods
SAMSUNG ELECTRONICS CO LTD35 citations92
US5840602ANov 24, 1998
Methods of forming nonmonocrystalline silicon-on-insulator thin-film transistors
SAMSUNG ELECTRONICS CO LTD20 citations92
US7710366B2May 4, 2010
Display device and driving method thereof
SAMSUNG ELECTRONICS CO LTD16 citations84
US7592986B2Sep 22, 2009
Display device and driving method thereof
SAMSUNG ELECTRONICS CO LTD8 citations84
US7586358B2Sep 8, 2009
Level shifter and driving method
SAMSUNG ELECTRONICS CO LTD11 citations84
US5920085AJul 6, 1999
Multiple floating gate field effect transistors and methods of operating same
SAMSUNG ELECTRONICS CO LTD7 citations73
US5804837ASep 8, 1998
Polysilicon thin-film transistor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations73
US5796126AAug 18, 1998
Hybrid schottky injection field effect transistor
SAMSUNG ELECTRONICS CO LTD14 citations73
US5793058AAug 11, 1998
Multi-gate offset source and drain field effect transistors and methods of operating same
SAMSUNG ELECTRONICS CO LTD14 citations73
US5728593AMar 17, 1998
Power insulated-gate transistor having three terminals and a manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD14 citations71
US7773055B2Aug 10, 2010
Display device and driving method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US7616178B2Nov 10, 2009
Driving device and driving method for a light emitting device, and a display panel and display device having the driving device
SAMSUNG ELECTRONICS CO LTD6 citations63
US7570236B2Aug 4, 2009
Display device and method for driving the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7868280B2Jan 11, 2011
Illumination sensing apparatus, driving method thereof and display device having the illumination sensing apparatus
SAMSUNG ELECTRONICS CO LTD5 citations62
US7843446B2Nov 30, 2010
Direct current to direct current converting circuit, display apparatus having the same and method of driving the direct current to direct current converting circuit
SAMSUNG ELECTRONICS CO LTD4 citations62
US5885859AMar 23, 1999
Methods of fabricating multi-gate, offset source and drain field effect transistors
SAMSUNG ELECTRONICS CO LTD2 citations62