Inventor
EUN BYUNG SOO
KR30 patents
⚠️ This page may combine multiple inventors who share the name “EUN BYUNG SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYNIX SEMICONDUCTOR INC
22 patentsUS7994561B2Aug 9, 2011
Semiconductor device for preventing the leaning of storage nodes
HYNIX SEMICONDUCTOR INC9 citations84
US7923343B2Apr 12, 2011
Capacitor of semiconductor device and method for forming the same
HYNIX SEMICONDUCTOR INC9 citations84
US7919390B2Apr 5, 2011
Isolation structure in memory device and method for fabricating the isolation structure
HYNIX SEMICONDUCTOR INC8 citations84
US7902037B2Mar 8, 2011
Isolation structure in memory device and method for fabricating the same
HYNIX SEMICONDUCTOR INC14 citations84
US7713887B2May 11, 2010
Method for forming isolation layer in semiconductor device
HYNIX SEMICONDUCTOR INC12 citations84
US7482246B2Jan 27, 2009
Trench isolation structure in a semiconductor device and method for fabricating the same
HYNIX SEMICONDUCTOR INC11 citations84
US7968948B2Jun 28, 2011
Trench isolation structure in a semiconductor device and method for fabricating the same
HYNIX SEMICONDUCTOR INC5 citations73
US8003489B2Aug 23, 2011
Method for forming isolation layer in semiconductor device
HYNIX SEMICONDUCTOR INC3 citations62
US7989287B2Aug 2, 2011
Method for fabricating storage node electrode in semiconductor device
HYNIX SEMICONDUCTOR INC3 citations62
US7932168B2Apr 26, 2011
Method for fabricating bitline in semiconductor device
HYNIX SEMICONDUCTOR INC2 citations62
US7879733B2Feb 1, 2011
Method for manufacturing semiconductor device free from layer-lifting between insulating layers
HYNIX SEMICONDUCTOR INC2 citations62
US7754561B2Jul 13, 2010
Method for fabricating isolation film in semiconductor device
HYNIX SEMICONDUCTOR INC3 citations62
US7736972B2Jun 15, 2010
Method for forming storage electrode of semiconductor memory device
HYNIX SEMICONDUCTOR INC2 citations62
US7737017B2Jun 15, 2010
Semiconductor device having recess gate and isolation structure and method for fabricating the same
HYNIX SEMICONDUCTOR INC3 citations62
US7442990B2Oct 28, 2008
Semiconductor device having a recess channel and method for fabricating the same
HYNIX SEMICONDUCTOR INC3 citations62
US7276725B2Oct 2, 2007
Bit line barrier metal layer for semiconductor device and process for preparing the same
HYNIX SEMICONDUCTOR INC3 citations62
US7153771B2Dec 26, 2006
Method for forming metal contact in semiconductor device
HYNIX SEMICONDUCTOR INC2 citations62
US7910480B2Mar 22, 2011
Method for insulating wires of semiconductor device
HYNIX SEMICONDUCTOR INC0 citations52
US7618885B2Nov 17, 2009
Semiconductor device having a recess channel and method for fabricating the same
HYNIX SEMICONDUCTOR INC0 citations52
US7435670B2Oct 14, 2008
Bit line barrier metal layer for semiconductor device and process for preparing the same
HYNIX SEMICONDUCTOR INC0 citations52
US7652323B2Jan 26, 2010
Semiconductor device having step gates and method of manufacturing the same
HYNIX SEMICONDUCTOR INC0 citations41
US7537995B2May 26, 2009
Method for fabricating a dual poly gate in semiconductor device
HYNIX SEMICONDUCTOR INC0 citations40
EUN BYUNG SOO
3 patentsUS8592326B2Nov 26, 2013
Method for fabricating an inter dielectric layer in semiconductor device
EUN BYUNG SOO2 citations60
US8169048B2May 1, 2012
Isolation structure in a memory device
EUN BYUNG SOO0 citations50
US8105497B2Jan 31, 2012
Method for fabricating cylinder type capacitor
EUN BYUNG SOO0 citations39