Inventor

SHIMODAIRA TAKANAO

JP21 patents

⚠️ This page may combine multiple inventors who share the name “SHIMODAIRA TAKANAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIMODAIRA TAKANAO

NGK INSULATORS LTD

Method for producing gallium nitride layer and seed crystal substrate used in same

Group 13 element nitride layer, free-standing substrate and functional element

Group 13 element nitride layer, free-standing substrate and functional element

Group 13 element nitride layer, free-standing substrate and functional element

Group 13 element nitride layer, free-standing substrate and functional element

Single crystal growing method

Group 13 nitride layer, composite substrate, and functional element

Group 13 element nitride layer, free-standing substrate and functional element

Method for producing nitride crystal

Method for growing group 13 nitride crystal and group 13 nitride crystal

System and method for producing group 13 nitride crystals comprised of growth vessels stacked within inner vessels placed over support tables with a central rotating shaft and revolving shafts attached to the support tables

Method for separating group 13 element nitride layer, and composite substrate

IWAI MAKOTO

Nitride single crystal manufacturing apparatus

Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal

Apparatus for producing nitride single crystal

YAMAZAKI SHIRO

Method for producing group III nitride-based compound semiconductor crystal

Method and apparatus for producing group III nitride based compound semiconductor

SHIMODAIRA TAKANAO

Group 3B nitride crystal substrate

Method for growing group 13 nitride crystal and group 13 nitride crystal

HIRAO TAKAYUKI

Group 13 nitride crystal with stepped surface

IMAI KATSUHIRO

Process for producing a nitride single crystal and apparatus therefor