Inventor
WU CHANG-MING
TW98 patents
⚠️ This page may combine multiple inventors who share the name “WU CHANG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
47 patentsUS9917165B2Mar 13, 2018
Memory cell structure for improving erase speed
TAIWAN SEMICONDUCTOR MFG CO LTD28 citations94
US9543511B2Jan 10, 2017
RRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations94
US9536969B2Jan 3, 2017
Self-aligned split gate flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations94
US9583591B2Feb 28, 2017
Si recess method in HKMG replacement gate technology
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations93
US10766763B2Sep 8, 2020
Sidewall stopper for MEMS device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9865610B2Jan 9, 2018
Si recess method in HKMG replacement gate technology
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9711508B2Jul 18, 2017
Capacitor structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9691883B2Jun 27, 2017
Asymmetric formation approach for a floating gate of a split gate flash memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9620372B2Apr 11, 2017
HK embodied flash memory and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9614048B2Apr 4, 2017
Split gate flash memory structure and method of making the split gate flash memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9567207B2Feb 14, 2017
Recess with tapered sidewalls for hermetic seal in MEMS devices
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9570454B2Feb 14, 2017
Structure with emedded EFS3 and FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations84
US9496276B2Nov 15, 2016
CMP fabrication solution for split gate memory embedded in HK-MG process
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US9391151B2Jul 12, 2016
Split gate memory device for improved erase speed
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US11932534B2Mar 19, 2024
MEMS device having a metallization structure embedded in a dielectric structure with laterally offset sidewalls of a first portion and a second portion
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11279615B2Mar 22, 2022
Method for manufacturing a MEMS device by first hybrid bonding a CMOS wafer to a MEMS wafer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10562763B2Feb 18, 2020
Fence structure to prevent stiction in a MEMS motion sensor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10453932B2Oct 22, 2019
Semiconductor structure for flash memory cells and method of making same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10294098B2May 21, 2019
Method for manufacturing a MEMS device by first hybrid bonding a CMOS wafer to a MEMS wafer
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10048220B2Aug 14, 2018
Biosensor field effect transistor having specific well structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10029910B1Jul 24, 2018
Formation method of MEMS device structure with cavities
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9978603B2May 22, 2018
Memory devices and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9741728B2Aug 22, 2017
Method for forming a split-gate flash memory cell device with a low power logic device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9728545B2Aug 8, 2017
Method for preventing floating gate variation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9646978B2May 9, 2017
Self-aligned flash memory device with word line having reduced height at outer edge opposite to gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9589976B2Mar 7, 2017
Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9559177B2Jan 31, 2017
Memory devices and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9502515B2Nov 22, 2016
Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9484352B2Nov 1, 2016
Method for forming a split-gate flash memory cell device with a low power logic device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9472645B1Oct 18, 2016
Dual control gate spacer structure for embedded flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9450057B2Sep 20, 2016
Split gate cells for embedded flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9397228B2Jul 19, 2016
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9391085B2Jul 12, 2016
Self-aligned split gate flash memory having liner-separated spacers above the memory gate
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9257571B1Feb 9, 2016
Memory gate first approach to forming a split gate flash memory cell device
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US11765980B2Sep 19, 2023
Method for forming a hard mask with a tapered profile
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9660188B2May 23, 2017
Phase change memory structure to reduce leakage from the heating element to the surrounding material
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US10784091B2Sep 22, 2020
Process and related device for removing by-product on semiconductor processing chamber sidewalls
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12336229B2Jun 17, 2025
Split gate memory device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12324156B2Jun 3, 2025
Memory devices and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11658224B2May 23, 2023
Split gate memory device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11348935B2May 31, 2022
Memory devices and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11261083B2Mar 1, 2022
Fence structure to prevent stiction in a MEMS motion sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11056566B2Jul 6, 2021
Split gate memory device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10962878B2Mar 30, 2021
Approach for ultra thin-film transfer and handling
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10297604B2May 21, 2019
Split gate memory devices and methods of manufacturing
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9978759B2May 22, 2018
Memory devices and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9502514B2Nov 22, 2016
Memory devices and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
TAIWAN SEMICONDUCTOR MFG
3 patentsUS9136393B2Sep 15, 2015
HK embodied flash memory and methods of forming the same
TAIWAN SEMICONDUCTOR MFG8 citations84
US9082651B2Jul 14, 2015
Memory devices and method of forming same
TAIWAN SEMICONDUCTOR MFG4 citations73
US9076681B2Jul 7, 2015
Memory devices and method of fabricating same
TAIWAN SEMICONDUCTOR MFG4 citations73
Showing the top 50 of 98 patents by PatentIndex Score.