Inventor
IMTHURN GEORGE PETE
US13 patents
Patents
13 patentsUS11081559B1Aug 3, 2021
Backside contact of a semiconductor device
QUALCOMM INC21 citations93
US11081582B2Aug 3, 2021
High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology
QUALCOMM INC2 citations71
US10896958B2Jan 19, 2021
Silicon-on-insulator backside contacts
QUALCOMM INC2 citations71
US10637411B2Apr 28, 2020
Transistor layout for improved harmonic performance
QUALCOMM INC2 citations71
US10522626B2Dec 31, 2019
Silicon-on-insulator backside contacts
QUALCOMM INC3 citations71
US10903357B2Jan 26, 2021
Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconductor on insulator (SOI) layer with a backside device
QUALCOMM INC0 citations61
US11277677B1Mar 15, 2022
Optically powered switch and method for operating an optically powered switch
QUALCOMM INC0 citations60
US12581692B2Mar 17, 2026
Transistor devices with double-side contacts
QUALCOMM INC0 citations52
US10680086B2Jun 9, 2020
Radio frequency silicon-on-insulator integrated heterojunction bipolar transistor
QUALCOMM INC0 citations51
US10600910B2Mar 24, 2020
High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology
QUALCOMM INC0 citations51
US11683065B2Jun 20, 2023
Series shunt biasing method to reduce parasitic loss in a radio frequency switch
QUALCOMM INC0 citations50
US10840383B1Nov 17, 2020
Non-volatile memory (NVM) structure with front and back gates
QUALCOMM INC0 citations49
US10559520B2Feb 11, 2020
Bulk layer transfer processing with backside silicidation
QUALCOMM INC0 citations40