P

Inventor

PARK MATTHEW

US27 patents
⚠️ This page may combine multiple inventors who share the name “PARK MATTHEW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

17 patents
US10014309B2Jul 3, 2018

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

MICRON TECHNOLOGY INC34 citations94
US10263007B2Apr 16, 2019

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

MICRON TECHNOLOGY INC11 citations84
US10453748B2Oct 22, 2019

Methods of forming semiconductor device structures including stair step structures

MICRON TECHNOLOGY INC4 citations73
US10157933B2Dec 18, 2018

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC2 citations72
US11177271B2Nov 16, 2021

Device, a method used in forming a circuit structure, a method used in forming an array of elevationally-extending transistors and a circuit structure adjacent thereto

MICRON TECHNOLOGY INC2 citations71
US11114379B2Sep 7, 2021

Integrated circuitry, memory integrated circuitry, and methods used in forming integrated circuitry

MICRON TECHNOLOGY INC3 citations70
US11937429B2Mar 19, 2024

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC0 citations62
US11705385B2Jul 18, 2023

Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs)

MICRON TECHNOLOGY INC0 citations62
US11239252B2Feb 1, 2022

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC0 citations62
US11069598B2Jul 20, 2021

Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs)

MICRON TECHNOLOGY INC0 citations62
US12279423B2Apr 15, 2025

Semiconductor devices comprising carbon-doped silicon nitride and related methods

MICRON TECHNOLOGY INC0 citations60
US11889695B2Jan 30, 2024

Device, a method used in forming a circuit structure, a method used in forming an array of elevationally-extending transistors and a circuit structure adjacent thereto

MICRON TECHNOLOGY INC0 citations60
US11282845B2Mar 22, 2022

Semiconductor devices comprising carbon-doped silicon nitride and related methods

MICRON TECHNOLOGY INC0 citations60
US10727242B2Jul 28, 2020

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

MICRON TECHNOLOGY INC0 citations52
US10672657B2Jun 2, 2020

Semiconductor device structures including stair step structures, and related semiconductor devices

MICRON TECHNOLOGY INC0 citations52
US10720446B2Jul 21, 2020

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC0 citations51
US12406926B2Sep 2, 2025

Microelectronic devices including stadium structures

MICRON TECHNOLOGY INC0 citations46

JOHNSON & JOHNSON CONSUMER INC

4 patents

UNIV LELAND STANFORD JUNIOR

2 patents

UNIV NORTHWESTERN

1 patent

ARISTA NETWORKS INC

1 patent

CORN PRODUCTS DEV INC

1 patent

KIM CHUN PIL

1 patent