Inventor
HAN JAE-JONG
KR22 patents
⚠️ This page may combine multiple inventors who share the name “HAN JAE-JONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS6730570B2May 4, 2004
Method for forming a self-aligned contact of a semiconductor device and method for manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD33 citations92
US7803679B2Sep 28, 2010
Method of forming a vertical diode and method of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US6828254B2Dec 7, 2004
Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the same
SAMSUNG ELECTRONICS CO LTD14 citations82
US6225199B1May 1, 2001
Semiconductor device having triple-well
SAMSUNG ELECTRONICS CO LTD17 citations80
US7273822B2Sep 25, 2007
Methods and apparatus for forming thin films for semiconductor devices
SAMSUNG ELECTRONICS CO LTD9 citations74
US7091074B2Aug 15, 2006
Method of forming a gate oxide layer in a semiconductor device and method of forming a gate electrode having the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US5821157AOct 13, 1998
Argon amorphizing polysilicon layer fabrication
SAMSUNG ELECTRONICS CO LTD13 citations74
US9390977B2Jul 12, 2016
Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variation
SAMSUNG ELECTRONICS CO LTD5 citations73
US11069820B2Jul 20, 2021
FinFET devices having active patterns and gate spacers on field insulating layers
SAMSUNG ELECTRONICS CO LTD2 citations71
US6794263B1Sep 21, 2004
Method of manufacturing a semiconductor device including alignment mark
SAMSUNG ELECTRONICS CO LTD8 citations71
US7118975B2Oct 10, 2006
Method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations62
US6881637B2Apr 19, 2005
Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate
SAMSUNG ELECTRONICS CO LTD2 citations62
US6723662B2Apr 20, 2004
Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride
SAMSUNG ELECTRONICS CO LTD5 citations62
US6815370B2Nov 9, 2004
Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US7888204B2Feb 15, 2011
Method of forming nonvolatile memory device having floating gate and related device
SAMSUNG ELECTRONICS CO LTD2 citations60
US9859376B2Jan 2, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10658249B2May 19, 2020
Methods for fabricating finFET devices having gate spacers on field insulating layers
SAMSUNG ELECTRONICS CO LTD0 citations50
US8987694B2Mar 24, 2015
Semiconductor devices having a vertical diode and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations48
US7763550B2Jul 27, 2010
Method of forming a layer on a wafer
SAMSUNG ELECTRONICS CO LTD0 citations45
US9202844B2Dec 1, 2015
Semiconductor devices having blocking layers and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations39