P

Inventor

PARK HONG-BAE

KR41 patents
⚠️ This page may combine multiple inventors who share the name “PARK HONG-BAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

23 patents
US7521331B2Apr 21, 2009

High dielectric film and related method of manufacture

SAMSUNG ELECTRONICS CO LTD64 citations98
US6229166B1May 8, 2001

Ferroelectric random access memory device and fabrication method therefor

SAMSUNG ELECTRONICS CO LTD66 citations96
US10014304B2Jul 3, 2018

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7972950B2Jul 5, 2011

Method of fabricating semiconductor device having dual gate

SAMSUNG ELECTRONICS CO LTD8 citations84
US10636886B2Apr 28, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD16 citations83
US7396719B2Jul 8, 2008

Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film

SAMSUNG ELECTRONICS CO LTD18 citations83
US6828254B2Dec 7, 2004

Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the same

SAMSUNG ELECTRONICS CO LTD14 citations82
US9240483B2Jan 19, 2016

Fin-type field effect transistors including aluminum doped metal-containing layer

SAMSUNG ELECTRONICS CO LTD10 citations81
US6929956B2Aug 16, 2005

Ferroelectric random access memory device and fabrication method therefor

SAMSUNG ELECTRONICS CO LTD7 citations74
US6806183B2Oct 19, 2004

Methods for forming capacitors on semiconductor substrates

SAMSUNG ELECTRONICS CO LTD10 citations74
US6146935ANov 14, 2000

Method for forming capacitor of semiconductor device using pre-bake

SAMSUNG ELECTRONICS CO LTD13 citations74
US10651179B2May 12, 2020

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US9543300B2Jan 10, 2017

CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device

SAMSUNG ELECTRONICS CO LTD2 citations73
US9252058B2Feb 2, 2016

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US11705503B2Jul 18, 2023

Semiconductor device including non-sacrificial gate spacers and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US9236313B2Jan 12, 2016

Method of fabricating semiconductor device having dual gate

SAMSUNG ELECTRONICS CO LTD1 citations63
US6815370B2Nov 9, 2004

Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the same

SAMSUNG ELECTRONICS CO LTD4 citations61
US12015063B2Jun 18, 2024

Method of manufacturing an integrated circuit device including a fin-type active region

SAMSUNG ELECTRONICS CO LTD0 citations60
US11309393B2Apr 19, 2022

Integrated circuit device including an overhanging hard mask layer

SAMSUNG ELECTRONICS CO LTD1 citations60
US7459372B2Dec 2, 2008

Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7399670B2Jul 15, 2008

Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed

SAMSUNG ELECTRONICS CO LTD0 citations52
US11532624B2Dec 20, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations50
US8367502B2Feb 5, 2013

Method of manufacturing dual gate semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations49

PARK HONG-BAE

3 patents

LG PHILIPS LCD CO LTD

3 patents

HYNIX SEMICONDUCTOR INC

2 patents

NA HOON-JOO

2 patents

HYUNDAI ELECTRONICS IND

2 patents

SANGNONG ENTPR CO LTD

2 patents

LG DISPLAY CO LTD

2 patents

LEE HYE-LAN

1 patent

HONG HYUNG-SEOK

1 patent