Inventor
ERVIN JOSEPH
US64 patents
⚠️ This page may combine multiple inventors who share the name “ERVIN JOSEPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
15 patentsUS9391204B1Jul 12, 2016
Asymmetric FET
IBM33 citations94
US9287272B2Mar 15, 2016
Metal trench capacitor and improved isolation and methods of manufacture
IBM5 citations84
US9054126B2Jun 9, 2015
Recessed single crystalline source and drain for semiconductor-on-insulator devices
IBM5 citations84
US9583497B2Feb 28, 2017
Metal trench capacitor and improved isolation and methods of manufacture
IBM3 citations73
US9397152B2Jul 19, 2016
Multilayer MIM capacitor
IBM4 citations73
US9058987B2Jun 16, 2015
Rare-earth oxide isolated semiconductor fin
IBM4 citations73
US9224801B2Dec 29, 2015
Multilayer MIM capacitor
IBM2 citations63
US9059213B2Jun 16, 2015
Embedded DRAM for extremely thin semiconductor-on-insulator
IBM2 citations63
US8836003B2Sep 16, 2014
Lateral epitaxial grown SOI in deep trench structures and methods of manufacture
IBM3 citations62
US10818668B2Oct 27, 2020
Metal trench capacitor and improved isolation and methods of manufacture
IBM0 citations52
US10079280B2Sep 18, 2018
Asymmetric FET
IBM0 citations52
US9899391B2Feb 20, 2018
Metal trench capacitor and improved isolation and methods of manufacture
IBM0 citations52
US9859373B2Jan 2, 2018
Asymmetric FET
IBM0 citations52
US9530701B2Dec 27, 2016
Method of forming semiconductor fins on SOI substrate
IBM1 citations52
US9159578B2Oct 13, 2015
Self-aligned devices and methods of manufacture
IBM0 citations52
GLOBALFOUNDRIES INC
10 patentsUS9478600B2Oct 25, 2016
Method of forming substrate contact for semiconductor on insulator (SOI) substrate
GLOBALFOUNDRIES INC6 citations84
US9343320B2May 17, 2016
Pattern factor dependency alleviation for eDRAM and logic devices with disposable fill to ease deep trench integration with fins
GLOBALFOUNDRIES INC3 citations73
US9228994B1Jan 5, 2016
Nanochannel electrode devices
GLOBALFOUNDRIES INC3 citations73
US10403772B2Sep 3, 2019
Electrical and optical via connections on a same chip
GLOBALFOUNDRIES INC0 citations52
US9929290B2Mar 27, 2018
Electrical and optical via connections on a same chip
GLOBALFOUNDRIES INC1 citations52
US9557290B2Jan 31, 2017
Nanochannel electrode devices
GLOBALFOUNDRIES INC0 citations52
US9490223B2Nov 8, 2016
Structure to prevent deep trench moat charging and moat isolation fails
GLOBALFOUNDRIES INC1 citations52
US9461042B2Oct 4, 2016
Sublithographic width finFET employing solid phase epitaxy
GLOBALFOUNDRIES INC0 citations52
US9379177B2Jun 28, 2016
Deep trench capacitor
GLOBALFOUNDRIES INC1 citations52
US9293520B2Mar 22, 2016
Method of forming substrate contact for semiconductor on insulator (SOI) substrate
GLOBALFOUNDRIES INC0 citations52
CHENG KANGGUO
6 patentsUS8395217B1Mar 12, 2013
Isolation in CMOSFET devices utilizing buried air bags
CHENG KANGGUO33 citations92
US9048339B2Jun 2, 2015
Deep trench capacitor
CHENG KANGGUO9 citations84
US8962423B2Feb 24, 2015
Multilayer MIM capacitor
CHENG KANGGUO8 citations84
US8853781B2Oct 7, 2014
Rare-earth oxide isolated semiconductor fin
CHENG KANGGUO10 citations84
US8637365B2Jan 28, 2014
Spacer isolation in deep trench
CHENG KANGGUO5 citations73
US8575670B2Nov 5, 2013
Embedded dynamic random access memory device formed in an extremely thin semiconductor on insulator (ETSOI) substrate
CHENG KANGGUO2 citations63
BOOTH JR ROGER A
6 patentsUS8846470B2Sep 30, 2014
Metal trench capacitor and improved isolation and methods of manufacture
BOOTH JR ROGER A5 citations84
US8492811B2Jul 23, 2013
Self-aligned strap for embedded capacitor and replacement gate devices
BOOTH JR ROGER A6 citations73
US8809994B2Aug 19, 2014
Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate
BOOTH JR ROGER A2 citations63
US8691697B2Apr 8, 2014
Self-aligned devices and methods of manufacture
BOOTH JR ROGER A3 citations63
US8455875B2Jun 4, 2013
Embedded DRAM for extremely thin semiconductor-on-insulator
BOOTH JR ROGER A3 citations63
US8232162B2Jul 31, 2012
Forming implanted plates for high aspect ratio trenches using staged sacrificial layer removal
BOOTH JR ROGER A2 citations63
COVENTOR INC
3 patentsUS11158368B2Oct 26, 2021
Static random-access memory cell design
COVENTOR INC5 citations73
US11301613B2Apr 12, 2022
Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment
COVENTOR INC0 citations57
US11620431B2Apr 4, 2023
System and method for performing depth-dependent oxidation modeling in a virtual fabrication environment
COVENTOR INC0 citations56
ERVIN JOSEPH
3 patentsUS8133781B2Mar 13, 2012
Method of forming a buried plate by ion implantation
ERVIN JOSEPH2 citations62
US8692307B2Apr 8, 2014
Lateral epitaxial grown SOI in deep trench structures and methods of manufacture
ERVIN JOSEPH2 citations61
US8232163B2Jul 31, 2012
Lateral epitaxial grown SOI in deep trench structures and methods of manufacture
ERVIN JOSEPH2 citations61
PEI CHENGWEN
2 patentsWANG GENG
2 patentsCOMPAQ COMPUTER CORP
1 patentDIGITAL EQUIPMENT CORP
1 patentTODI RAVI M
1 patentShowing the top 50 of 64 patents by PatentIndex Score.