Inventor
WANG HSIAO-LEI
TW8 patents
⚠️ This page may combine multiple inventors who share the name “WANG HSIAO-LEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PROMOS TECHNOLOGIES INC
5 patentsUS6391706B2May 21, 2002
Method for making deep trench capacitors for DRAMs with reduced faceting at the substrate edge and providing a more uniform pad Si3N4layer across the substrate
PROMOS TECHNOLOGIES INC26 citations90
US6680237B2Jan 20, 2004
Method of manufacturing deep trench capacitor
PROMOS TECHNOLOGIES INC22 citations89
US6703273B2Mar 9, 2004
Aggressive capacitor array cell layout for narrow diameter DRAM trench capacitor structures via SOI technology
PROMOS TECHNOLOGIES INC45 citations87
US6444524B1Sep 3, 2002
Method for forming a trench capacitor
PROMOS TECHNOLOGIES INC11 citations71
US6734106B2May 11, 2004
Method of buried strap out-diffusion formation by gas phase doping
PROMOS TECHNOLOGIES INC7 citations70
WANG HSIAO LEI
2 patentsUS12295185B2May 6, 2025
Epitaxial substrate having a 2D material interposer, method for manufacturing the epitaxial substrate, and device prepared from the epitaxial substrate
WANG HSIAO LEI0 citations40
US10297446B2May 21, 2019
Encapsulated substrate, manufacturing method, high band-gap device having encapsulated substrate
WANG HSIAO LEI0 citations29