Inventor

OGIHARA TSUTOMU

JP192 patents

⚠️ This page may combine multiple inventors who share the name “OGIHARA TSUTOMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OGIHARA TSUTOMU

SHINETSU CHEMICAL CO

Method for the preparation of surface-modified silica particles

Antireflective film material, and antireflective film and pattern formation method using the same

Antireflective film material, and antireflective film and pattern formation method using the same

Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern

Silacyclohexane compound, a method of preparing it and a liquid crystal composition containing it

Process of preparing silicone composition, and cosmetic and lustering materials containing silicone composition obtained

Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process

Polymer for resist under layer film composition, resist under layer film composition, and patterning process

Method for producing resist composition

Underlayer film-forming composition and pattern forming process

Patterning process

Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film

Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process

Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method

Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method

Silicone-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method

Antireflection film composition, substrate, and patterning process

Sacrificial film-forming composition, patterning process, sacrificial film and removal method

Porous film-forming composition, patterning process, and porous sacrificial film

Semiconductor device comprising porous film

Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Silacyclohexane compound, a method of preparing it and a liquid crystal composition containing it

Silacyclohexanone compound and a method of preparing a silacyclohexane-type liquid crystal composition containing it

Silacyclohexane compound, a method of preparing it and a liquid crystal composition containing it

Silacyclohexane compound, a method of preparing it and a liquid crystal composition containing it

Process for preparing silacyclohexane compounds

Silacyclohexane carbaldehyde compounds and processes for preparing silacyclohexane-based liquid crystal compounds from the carbaldehyde compound

Silacyclohexane compound, a method of preparaing it and a liquid crystal composition containing it

Silacyclohexane compound, a method of preparing it and a liquid crystal composition containing it

Silacyclohexane compound, a method of preparing it and a liquid crystal composition containing it

Patterning process

Patterning process

OGIHARA TSUTOMU

Composition for forming resist underlayer film and patterning process using the same

Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process

Patterning process and composition for forming silicon-containing film usable therefor

Resist underlayer film composition and patterning process using the same

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

IBM

Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same

Silicon-containing antireflective coatings including non-polymeric silsesquioxanes

HATAKEYAMA JUN

Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film

Patterning process

SEIKO EPSON CORP

Digital trimming for frequency adjustment

Digital trimming for frequency adjustment

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

KINSHO TAKESHI

Naphthalene derivative, resist bottom layer material, and patterning process

KORI DAISUKE

Biphenyl derivative, resist bottom layer material, bottom layer forming method, and patterning process