Inventor
YAMABE KIKUO
JP21 patents
⚠️ This page may combine multiple inventors who share the name “YAMABE KIKUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
18 patentsUS5189503AFeb 23, 1993
High dielectric capacitor having low current leakage
TOSHIBA KK128 citations97
US5502010AMar 26, 1996
Method for heat treating a semiconductor substrate to reduce defects
TOSHIBA KK122 citations96
US5360748ANov 1, 1994
Method of manufacturing a semiconductor device
TOSHIBA KK53 citations96
US5259883ANov 9, 1993
Method of thermally processing semiconductor wafers and an apparatus therefor
TOSHIBA KK95 citations96
US6185472B1Feb 6, 2001
Semiconductor device manufacturing method, manufacturing apparatus, simulation method and simulator
TOSHIBA KK76 citations95
US5514904AMay 7, 1996
Semiconductor device with monocrystalline gate insulating film
TOSHIBA KK57 citations95
US5489542AFeb 6, 1996
Method for fabricating semiconductor device in which threshold voltage shift and charge-pumping current are improved
TOSHIBA KK71 citations95
US5237188AAug 17, 1993
Semiconductor device with nitrided gate insulating film
TOSHIBA KK83 citations95
US5757063AMay 26, 1998
Semiconductor device having an extrinsic gettering film
TOSHIBA KK47 citations92
US4735824AApr 5, 1988
Method of manufacturing an MOS capacitor
TOSHIBA KK46 citations92
US5698891ADec 16, 1997
Semiconductor device and method for manufacturing the same
TOSHIBA KK34 citations91
US5431561AJul 11, 1995
Method and apparatus for heat treating
TOSHIBA KK25 citations91
US5885905AMar 23, 1999
Semiconductor substrate and method of processing the same
TOSHIBA KK26 citations90
US5543334AAug 6, 1996
Method of screening semiconductor device
TOSHIBA KK27 citations90
US5297956AMar 29, 1994
Method and apparatus for heat treating
TOSHIBA KK17 citations81
US5173440ADec 22, 1992
Method of fabricating a semiconductor device by reducing the impurities
TOSHIBA KK18 citations74
US5073813ADec 17, 1991
Semiconductor device having buried element isolation region
TOSHIBA KK11 citations74
US5354710AOct 11, 1994
Method of manufacturing semiconductor devices using an adsorption enhancement layer
TOSHIBA KK17 citations70
TOKYO ELECTRON LTD
2 patentsUS8034179B2Oct 11, 2011
Method for insulating film formation, storage medium from which information is readable with computer, and processing system
TOKYO ELECTRON LTD3 citations63
US8026187B2Sep 27, 2011
Method of forming silicon oxide film and method of production of semiconductor memory device using this method
TOKYO ELECTRON LTD0 citations52