Inventor
OHNISHI KAZUHIRO
JP14 patents
⚠️ This page may combine multiple inventors who share the name “OHNISHI KAZUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
7 patentsUS5793097AAug 11, 1998
Semiconductor device having conducting structure
HITACHI LTD30 citations96
US6524903B2Feb 25, 2003
Method of manufacturing a semiconductor device having two peaks in an impurity concentration distribution
HITACHI LTD33 citations91
US6835632B2Dec 28, 2004
Semiconductor device and process of producing the same
HITACHI LTD6 citations74
US6610569B1Aug 26, 2003
Semiconductor device and process of producing the same
HITACHI LTD5 citations74
US6133094AOct 17, 2000
Semiconductor device and process of producing the same
HITACHI LTD7 citations74
US5324983AJun 28, 1994
Semiconductor device
HITACHI LTD10 citations73
US6524924B1Feb 25, 2003
Semiconductor device and process of producing the same
HITACHI LTD2 citations63
RENESAS TECH CORP
5 patentsUS6936875B2Aug 30, 2005
Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same
RENESAS TECH CORP99 citations98
US6878606B2Apr 12, 2005
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
RENESAS TECH CORP20 citations92
US7042051B2May 9, 2006
Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel region
RENESAS TECH CORP29 citations91
US7029988B2Apr 18, 2006
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
RENESAS TECH CORP10 citations73
US6750503B2Jun 15, 2004
Stacked gate electrode for a MOS transistor of a semiconductor device
RENESAS TECH CORP9 citations73