Inventor
KLEIN RITA J
US76 patents
⚠️ This page may combine multiple inventors who share the name “KLEIN RITA J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
44 patentsUS7550380B2Jun 23, 2009
Electroless plating of metal caps for chalcogenide-based memory devices
MICRON TECHNOLOGY INC94 citations97
US6518198B1Feb 11, 2003
Electroless deposition of doped noble metals and noble metal alloys
MICRON TECHNOLOGY INC73 citations96
US6511576B2Jan 28, 2003
System for planarizing microelectronic substrates having apertures
MICRON TECHNOLOGY INC64 citations96
US6306768B1Oct 23, 2001
Method for planarizing microelectronic substrates having apertures
MICRON TECHNOLOGY INC82 citations96
US7303939B2Dec 4, 2007
Electro- and electroless plating of metal in the manufacture of PCRAM devices
MICRON TECHNOLOGY INC10 citations93
US7109056B2Sep 19, 2006
Electro-and electroless plating of metal in the manufacture of PCRAM devices
MICRON TECHNOLOGY INC20 citations93
US6984301B2Jan 10, 2006
Methods of forming capacitor constructions
MICRON TECHNOLOGY INC12 citations93
US7935242B2May 3, 2011
Method of selectively removing conductive material
MICRON TECHNOLOGY INC13 citations84
US6884723B2Apr 26, 2005
Methods for planarization of group VIII metal-containing surfaces using complexing agents
MICRON TECHNOLOGY INC12 citations84
US7189626B2Mar 13, 2007
Electroless plating of metal caps for chalcogenide-based memory devices
MICRON TECHNOLOGY INC15 citations83
US7282387B2Oct 16, 2007
Electro- and electroless plating of metal in the manufacture of PCRAM devices
MICRON TECHNOLOGY INC7 citations74
US7244678B2Jul 17, 2007
Methods for planarization of Group VIII metal-containing surfaces using complexing agents
MICRON TECHNOLOGY INC5 citations74
US7179361B2Feb 20, 2007
Method of forming a mass over a semiconductor substrate
MICRON TECHNOLOGY INC3 citations74
US7098128B2Aug 29, 2006
Method for filling electrically different features
MICRON TECHNOLOGY INC8 citations74
US6774049B2Aug 10, 2004
Electroless deposition of doped noble metals and noble metal alloys
MICRON TECHNOLOGY INC5 citations74
US6589414B2Jul 8, 2003
Nitride layer forming methods
MICRON TECHNOLOGY INC9 citations74
US6440230B1Aug 27, 2002
Nitride layer forming method
MICRON TECHNOLOGY INC6 citations74
US11705500B2Jul 18, 2023
Assemblies having conductive structures with three or more different materials
MICRON TECHNOLOGY INC2 citations73
US11342265B2May 24, 2022
Apparatus including a dielectric material in a central portion of a contact via, and related methods, memory devices and electronic systems
MICRON TECHNOLOGY INC3 citations73
US11315877B2Apr 26, 2022
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC2 citations73
US11121143B2Sep 14, 2021
Integrated assemblies having conductive posts extending through stacks of alternating materials
MICRON TECHNOLOGY INC4 citations73
US10957775B2Mar 23, 2021
Assemblies having conductive structures with three or more different materials
MICRON TECHNOLOGY INC3 citations73
US10553611B2Feb 4, 2020
Memory arrays and methods of fabricating integrated structure
MICRON TECHNOLOGY INC1 citations73
US11393756B2Jul 19, 2022
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC5 citations72
US11791268B2Oct 17, 2023
Tungsten structures and methods of forming the structures
MICRON TECHNOLOGY INC2 citations70
US11244903B2Feb 8, 2022
Tungsten structures and methods of forming the structures
MICRON TECHNOLOGY INC4 citations70
US11812610B2Nov 7, 2023
Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods
MICRON TECHNOLOGY INC0 citations63
US11800706B2Oct 24, 2023
Integrated assemblies having conductive posts extending through stacks of alternating materials
MICRON TECHNOLOGY INC0 citations63
US9935120B2Apr 3, 2018
Methods of fabricating integrated structures
MICRON TECHNOLOGY INC1 citations63
US9287379B2Mar 15, 2016
Memory arrays
MICRON TECHNOLOGY INC1 citations63
US7700485B2Apr 20, 2010
Electro- and electroless plating of metal in the manufacture of PCRAM devices
MICRON TECHNOLOGY INC1 citations63
US7264988B2Sep 4, 2007
Electro-and electroless plating of metal in the manufacture of PCRAM devices
MICRON TECHNOLOGY INC1 citations63
US7041606B2May 9, 2006
Electroless deposition of doped noble metals and noble metal alloys
MICRON TECHNOLOGY INC1 citations63
US6693366B2Feb 17, 2004
Electroless deposition of doped noble metals and noble metal alloys
MICRON TECHNOLOGY INC3 citations63
US12543559B2Feb 3, 2026
Memory device including control gates having tungsten structure
MICRON TECHNOLOGY INC0 citations62
US12424553B2Sep 23, 2025
Memory device including control gates having tungsten structure
MICRON TECHNOLOGY INC0 citations62
US12381153B2Aug 5, 2025
Microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC0 citations62
US12170250B2Dec 17, 2024
Microelectronic devices and memory devices including conductive levels having varying compositions
MICRON TECHNOLOGY INC0 citations62
US12034057B2Jul 9, 2024
Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material
MICRON TECHNOLOGY INC0 citations62
US11894305B2Feb 6, 2024
Microelectronic devices including staircase structures, and related memory devices and electronic systems
MICRON TECHNOLOGY INC0 citations62
US11594495B2Feb 28, 2023
Microelectronic devices including conductive levels having varying compositions, and related memory devices, electronic systems, and methods
MICRON TECHNOLOGY INC0 citations62
US11195848B2Dec 7, 2021
Memory arrays and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations62
US11158718B2Oct 26, 2021
Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material
MICRON TECHNOLOGY INC1 citations62
US11056507B2Jul 6, 2021
Memory arrays and methods used in forming a memory array
MICRON TECHNOLOGY INC0 citations62
LODESTAR LICENSING GROUP LLC
4 patentsUS12002759B2Jun 4, 2024
Apparatuses including a conductive contact including a dielectric material surrounded by a conductive material
LODESTAR LICENSING GROUP LLC2 citations73
US12368101B2Jul 22, 2025
Apparatuses including interconnect structures including dielectric material surrounded by conductive material, and related memory devices
LODESTAR LICENSING GROUP LLC0 citations63
US12096633B2Sep 17, 2024
Memory arrays and methods used in forming a memory array comprising strings of memory cells
LODESTAR LICENSING GROUP LLC0 citations62
US11990528B2May 21, 2024
Assemblies having conductive structures with three or more different materials
LODESTAR LICENSING GROUP LLC0 citations62
UNIV TOLEDO
1 patentWELLS DAVID H
1 patentShowing the top 50 of 76 patents by PatentIndex Score.